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G8909-01 Datasheet(PDF) 1 Page - Hamamatsu Corporation |
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G8909-01 Datasheet(HTML) 1 Page - Hamamatsu Corporation |
1 / 3 page G8909-01 Features l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm Applications l DWDM monitor with AWG PHOTODIODE InGaAs PIN photodiode array Photodiode array for DWDM monitor 1 I General ratings Parameter Value Unit Active area f0.08 mm Pixel pitch 250 µm Number of elements 40 ch I Absolute maximum ratings Parameter Symbol Remark Value Unit Reverse voltage VR Max. 6V Allowable input power Pin Max. 10 mV Operating temperature Topr -40 to +85 °C Storage temperature Tstg * -40 to +85 °C * In N environment or in vacuum I Electrical and optical characteristics (Ta=25 °C, per 1 element) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range l - 0.9 to 1.7 - µm l=1.31 µm 0.8 0.9 - Photo sensitivity S l=1.55 µm 0.85 0.95 - A/W Photo response non-uniformity PRNU - - ±5 % Dark current ID VR=5 V - 0.02 0.2 nA Shunt resistance Rsh VR=10 mV - 8 - GW Terminal capacitance Ct VR=5 V, f=1 MHz - 1.4 - pF Cross-talk - VR=0.1 V - -33 - dB |
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