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G8909-01 Datasheet(PDF) 1 Page - Hamamatsu Corporation

Part # G8909-01
Description  InGaAs PIN photodiode array
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Manufacturer  HAMAMATSU [Hamamatsu Corporation]
Direct Link  http://www.hamamatsu.com
Logo HAMAMATSU - Hamamatsu Corporation

G8909-01 Datasheet(HTML) 1 Page - Hamamatsu Corporation

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G8909-01
Features
l 250 µm pitch, 40 ch parallel readout
l Low cross-talk
l Precise chip position tolerance: ±0.05 mm
Applications
l DWDM monitor with AWG
PHOTODIODE
InGaAs PIN photodiode array
Photodiode array for DWDM monitor
1
I General ratings
Parameter
Value
Unit
Active area
f0.08
mm
Pixel pitch
250
µm
Number of elements
40
ch
I Absolute maximum ratings
Parameter
Symbol
Remark
Value
Unit
Reverse voltage
VR Max.
6V
Allowable input power
Pin Max.
10
mV
Operating temperature
Topr
-40 to +85
°C
Storage temperature
Tstg
*
-40 to +85
°C
* In N environment or in vacuum
I Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
l
-
0.9 to 1.7
-
µm
l=1.31 µm
0.8
0.9
-
Photo sensitivity
S
l=1.55 µm
0.85
0.95
-
A/W
Photo response non-uniformity
PRNU
-
-
±5
%
Dark current
ID
VR=5 V
-
0.02
0.2
nA
Shunt resistance
Rsh
VR=10 mV
-
8
-
GW
Terminal capacitance
Ct
VR=5 V, f=1 MHz
-
1.4
-
pF
Cross-talk
-
VR=0.1 V
-
-33
-
dB


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