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C10082CA Datasheet(PDF) 1 Page - Hamamatsu Corporation |
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C10082CA Datasheet(HTML) 1 Page - Hamamatsu Corporation |
1 / 4 page Features l Integrated with back-thinned type CCD image sensor: Sensitivity is about two orders of magnitude higher than CMOS type l High resolution: 1 nm (C10082CAH, C10083CAH) l High throughput due to transmission grating made of quartz l Highly accurate optical characteristics l Wide spectral response range l Easy to install into equipment l Wavelength conversion factor *1 is recorded in internal memory Applications l Low-light-level measurement such as fluorescence measurement l Semiconductor process control l Evaluation of light source characteristics such as LED MODULE High sensitivity type (integrated with back-thinned type CCD image sensor) C10082CA, C10082CAH, C10083CA, C10083CAH Mini-spectrometer TM series TM series mini-spectrometers are polychromators integrated with optical elements, an image sensor and a driver circuit. Light to be measured is guided into the entrance port of TM series through an optical fiber and the spectrum measured with the built-in image sensor is output from the USB port to a PC for data acquisition. They are high sensitivity mini-spectrometers employing a back-thinned type CCD image sensor. Their sensitivity is about two orders of magnitudes higher than CMOS type making TM series even more ideal for low-light-level measurement. C10082CAH and C10083CAH are high resolution type (spectral resolution: 1 nm Typ.). Mini-spectrometer TM series comes supplied with free sample software that allows setting measurement conditions, acquiring and saving data, and displaying graphs. Driver software and DLL are also supplied as accessory items to allow the users to configure their own measurement software. 1 s O p tic a l ch a ra c te ris tics T M -U V /VIS-C C D T M -V IS /N IR -C C D Para m e te r C100 82C A C 10082 CA H C100 83C A C 10083 CA H Un it S p e c tral response ra n g e 2 00 to 8 0 0 3 20 to 1 0 0 0 n m S p e c tra l re s o lu tio n M a x. (S p e ct ral re sp o n se h alf wi dt h) *2 6 1 * 3 8 * 4 1 * 3, *4 nm W a v e len gth re produ c ibility * 5 ±0 .2 n m W a v e len gth te m p erature d ep ende n c e 0.0 4 nm/° C Spec tra l s tray ligh t * 2, *6 -3 3 -3 0 d B s E le c trica l c h a rac te ris tics Para m e te r Spec ific a tio n Un it A/D c on v ers ion 16 bit In te g ra tio n tim e 10 to 100 00 ms In te rfa c e U S B 1 .1 - US B b u s p o w e r c urren t c o ns um p tio n 10 0 mA E x tern al pow er su pply 5 V s G e ne ral rating s / A b s o lu te ma xim u m ra tin g s Para m e te r Spec ific a tio n Un it D im e n s io ns 95 (W ) × 92 (D ) × 76 (H ) m m Im ag e s en s or B a c k -th in n e d ty p e CCD im a g e s e n s o r (S 1 04 20-11 06 ) - N u m be r of p ixels 20 48 pix e ls S lit (H ) × (V ) *7 70 × 8 00 10 × 1000 70 × 8 00 10 × 1000 µm O ptic a l N A 0.2 2 0.11 0.2 2 0.11 - C o nne c tor for o p tic al fibe r SMA9 0 5 D - O pe ratin g te m p era tu re *8 + 5 to + 4 0 °C Sto rag e tem p era ture -2 0 to + 7 0 °C *1: A c o nv e rs ion fa c tor fo r c on v ertin g th e im a ge s en s or p ixel nu m be r in to a w a v ele ng th is recorded in th e m odu le. A calc u latio n facto r fo r c o nv e rting the A /D co nv e rte d c o un t in to the inp ut ligh t in tensity is n o t p rov id ed . *2 : D e p ends o n th e slit op ening. Va lu e s w e re m easu red w ith th e s lit listed in th e ta ble “s G e n e ra l ra tin g s / A b s o lu te m a xim u m ra tin g s ”. *3 : Ty p ic a l *4 : λ=320 to 900 nm *5 : M e asu red und er cons ta n t lig h t in p ut co n d itions *6: W h en m on oc hrom atic lig ht o f th e following wav e leng th s is inpu t, s p ec tral s tray light is d efin ed as the ratio of the c ou nt m e asure d at the inp ut wa vele ngth, to the c ou nt m eas ure d in a re gio n of the inp ut waveleng th ±4 0 nm . C 10 0 82 C A /C 100 8 2 C A H : 50 0 n m , C 1 008 3C A /C 100 83 C A H : 65 0 nm *7 : E ntra n ce slit apertu re size *8 : N o c o n d e n s a tio n s Output comparison (relative value) * A/D count when constant light level enters fiber. C10082CA C10082CAH C10082MD C10083CA C10083CAH C10083MD WAVELENGTH (nm) 200 300 400 500 600 700 800 900 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1000 (Typ. Ta=25 ˚C) KACCB0168EA s Measurable optical power KACCB0146EA 10 -15 10 -13 10 -11 10 -9 10 -7 LIGHT POWER * (W) C10082CA (CCD TYPE) C10082CA (CCD TYPE) * Light power incident on mini-spectrometer through slit ( λ=500 nm, integration time: 10 ms to 10000 ms) C10082MD (CMOS TYPE) Comparison of CCD type and CMOS type |
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