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TPD4111K Datasheet(PDF) 7 Page - Toshiba Semiconductor |
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TPD4111K Datasheet(HTML) 7 Page - Toshiba Semiconductor |
7 / 27 page TPD4111K 2006-06-30 7 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VBB 250 V Power supply voltage VCC 20 V Output current (DC) Iout 1 A Output current (pulse) Iout 2 A Input voltage (except VS) VIN −0.5 to VREG + 0.5 V Input voltage (only VS) VVS 8.2 V VREG current IREG 50 mA Power dissipation (Ta = 25°C) PC 4 W Power dissipation (Tc = 25°C) PC 20 W Operating junction temperature Tjopr −20 to 135 °C Junction temperature Tj 150 °C Storage temperature Tstg −55 to 150 °C Lead-heat sink isolation voltage Vhs 1000 (1 min) Vrms In case that the IC is erroneously connected to 200 VAC power supply, it can withstand a voltage of up to 315 V for 1 min under the condition of VS < 1.1 V. |
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