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TPCP8401 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPCP8401 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 10 page TPCP8401 2006-11-13 4 N-ch Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±1 μA Drain cut-off current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 1 μA Drain-source breakdown voltage V (BR) DSS ID = 0.1 mA, VGS = 0 V 20 ⎯ ⎯ V Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.6 ⎯ 1.1 V VGS = 1.5 V, ID = 1 mA ⎯ 5.2 15 VGS = 2.5 V, ID = 10 mA ⎯ 2.2 4 Drain-source ON resistance RDS (ON) VGS = 4 V, ID = 10 mA ⎯ 1.5 3 Ω Forward transfer admittance |Yfs| VDS = 3 V, ID = 10 mA 40 ⎯ ⎯ mS Turn-on time ton ⎯ 70 ⎯ Switching time Turn-off time toff Duty <= 1%, tw = 10 μs ⎯ 125 ⎯ ns Input capacitance Ciss ⎯ 9.3 ⎯ Reverse transfer capacitance Crss ⎯ 4.5 ⎯ Output capacitance Coss VDS = 3 V, VGS = 0 V, f = 1 MHz ⎯ 9.8 ⎯ pF Precaution Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device. The VGS recommended voltage for turning on this product is 1.5 V or higher. VDD ∼− 3 V 0 V VGS 2.5 V ID = 10 mA VOUT |
Similar Part No. - TPCP8401_07 |
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Similar Description - TPCP8401_07 |
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