TPCP8401_07 datasheet(4/10 Pages) TOSHIBA

Part #	TPCP8401

Description	TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS ??/ ?-MOS ??

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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4 / 10 page

TPCP8401

2006-11-13

4

N-ch

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0 V

⎯

±1

μA

Drain cut-off current

IDSS

VDS = 20 V, VGS = 0 V

⎯

1

μA

Drain-source breakdown voltage

V (BR) DSS

ID = 0.1 mA, VGS = 0 V

20

⎯

V

Gate threshold voltage

Vth

VDS = 3 V, ID = 0.1 mA

0.6

⎯

1.1

V

VGS = 1.5 V, ID = 1 mA

⎯

5.2

15

VGS = 2.5 V, ID = 10 mA

⎯

2.2

4

Drain-source ON resistance

RDS (ON)

VGS = 4 V, ID = 10 mA

⎯

1.5

3

Ω

Forward transfer admittance

|Yfs|

VDS = 3 V, ID = 10 mA

40

⎯

mS

Turn-on time

ton

⎯

70

⎯

Switching time

Turn-off time

toff

Duty <= 1%, tw = 10 μs

⎯

125

⎯

ns

Input capacitance

Ciss

⎯

9.3

⎯

Reverse transfer capacitance

Crss

⎯

4.5

⎯

Output capacitance

Coss

VDS = 3 V, VGS = 0 V, f = 1 MHz

⎯

9.8

⎯

pF

Precaution

Vth can be expressed as the voltage between the gate and source when the low operating current value is ID =

100

μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off)

requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)

Be sure to take this into consideration when using the device. The VGS recommended voltage for turning on this

product is 1.5 V or higher.

VDD ∼− 3 V

0 V

VGS

2.5 V

ID = 10 mA

VOUT

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TPCP8401 Datasheet(PDF) 4 Page - Toshiba Semiconductor

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