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TPCF8304 Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # TPCF8304
Description  TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCF8304 Datasheet(HTML) 4 Page - Toshiba Semiconductor

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TPCF8304
2006-11-17
4
Drain current ID (A)
RDS (ON) – ID
Gate-source voltage VGS
(V)
ID – VGS
Gate-source voltage VGS
(V)
VDS – VGS
Drain-source voltage VDS
(V)
ID – VDS
Drain-source voltage VDS
(V)
ID – VDS
Drain current ID (A)
⎪Yfs⎪ – ID
10
0.1
-1
-10
100
1000
-5
-4
-2
-1
0
-3
Common source
Ta
= 25°C
Pulse test
VGS = -2.3
-2.5
-2.6
-3.0
-2.8
-3.5
-2.7
-10
-6
-4.5
0
-0.2
-0.4
-0.6
-0.8
-1.0
VGS = -2.3 V
Common source
Ta
= 25°C
Pulse test
-2.6
-3.5
-3.0
-10
-2.5
-6
-2.7
-2.8
-4.5
-10
-8
-4
-2
0
-6
0
-1
-2
-3
-4
-5
Ta
= −55°C
25
100
Common source
VDS = -10 V
Pulse test
0
-1
-2
-3
0
-5
-4
-8
-6
-4
-2
ID = -3.2A
Common source
Ta
= 25℃
Pulse test
-1.6
-0.8
0
-2
-4
-6
-8
-10
0
-1.6
-1.2
-0.8
-0.4
-2.0
25
100
Ta
= −55°C
Common source
VDS = -10 V
Pulse test
-0.1
-0.3
-1
-3
-10
1
10
100
VGS = -4.5 V
-10
Common source
Ta
= 25°C
Pulse test


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