 |
 |
|
| STB19NF20 |
|
|||||||||||||||||
 STMICROELECTRONICS
|
| |||||||||||||||||
|
5 page 
STB19NF20 - STF9NF20 - STP19NF20 Electrical characteristics 5/16 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=100 V, ID= 7.5A, RG=4.7Ω, VGS=10V 11.5 22 ns ns td(off) tf Turn-off delay time Fall time VDD = 100 V, ID = 7.5A, RG = 4.7Ω, VGS = 10V 19 11 ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 15 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 60 A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD=15A, VGS=0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=15A, VDD=50V di/dt = 100A/µs, 125 0.55 8.8 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=15A, VDD=50V di/dt = 100A/µs, Tj=150°C (see Figure 20) 148 0.73 9.9 ns µC A |
