© 2007 California Micro Devices Corp. All rights reserved.

5/16/07

490 N. McCarthy Blvd., Milpitas, CA 95035-5112

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Tel: 408.263.3214

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Fax: 408.263.7846

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www.cmd.com

3

CM1240

Note 1: Guaranteed at 25°C only

Note 2: ESD applied to input/output pins with respect to GND, one at a time. These parameters are guaranteed by design.

Symbol

Parameter

Conditions

Min

Typ

Max

Units

LV diode Capacitance at 3Vdc; 1MHz, 30mVac

6

pF

HV diode Capacitance at 3Vdc; 1MHz, 30mVac

25

pF

LV Diode Leakage at +3.3V reverse bias voltage

0.01

0.4

μA

HV Diode Leakage at +11V reverse bias voltage

0.01

0.4

μA

LV Diode Signal Clamp Voltage:

Positive Clamp, 10mA

Negative Clamp, –10mA

5.6

–1.5

6.8

–0.8

9

–0.4

V

V

HV Diode Signal Clamp Voltage:

Positive Clamp, 10mA

Negative Clamp, –10mA

13

–1.5

16

–0.8

19

–0.4

V

V

In-system ESD withstand voltage:

Human Body Model (MIL-STD-883, method 3015)

IEC 61000-4-2, contact discharge method

Note 2

±25

±12

kV

kV

Positive

Negative

2.8

1.2

Ω

Ω

Positive

Negative

1

0.7

Ω

Ω

Specifications