OM6425SP6 datasheet(2/2 Pages) ETC2

Part #	OM6425SP6

Description	Industrial 11-Pin, 150 to 500 V, N-Channel Power MOSFET, Full ?쏦??Bridge

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OM6423SP6 - OM6426SP6

2.1

205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246

ELECTRICAL CHARACTERISTICS: T = 25° unless otherwise noted.

6425SP6

6426SP6

Characteristic

Symbol

Min.

Max.

Min.

Max.

Units

Drain-Source Breakdown Voltage

V

(BR)DSS

(V

GS = 0, ID = 0.25mA)

200

-

500

-

V

dc

Zero Gate Voltage Drain Current

I

DSS

(V

DS = Rated VDSS, VGS = 0)

-

250

-

250

µA

(V

DS = Rated VDSS, VGS = 0, TJ = 85°C)

-

1000

-

1000

Gate-Body Leakage Current, Forward

I

GSSF

nA

(V

GSF = ±20 Vdc, VDS = 0)

500

Gate Threshold Voltage

V

GS(th)

V

(V

DS = VGS, ID = 250µA)

2.0

4.0

2.0

4.0

Static Drain-Source-On-Resistance

(V

GS = 10Vdc)rDS(on)

-

.8

-

3.0

Drain-Source-On-Voltage

@ I

D =

-

2.0

-

1.0

A

(V

GS = 10V, TJ = 85°C)

V

DS(on)

-

1.6

-

3.0

V

Forward Transconductance (V

DS = 10V, ID = 12A)

g

FS

-

1.3

-

1.0

mhos

Input Capacitance

(V

DS = 25V,

C

iss

-

600

-

400

pF

Output Capacitance

V

GS = 0,

C

oss

-

300

-

150

pF

Reverse Transfer Capacitance

f = 1MHz)

C

rss

-80-40

pF

Turn-On Delay Time

(V

DD = 25V, ID = 2A)

t

d(on)

-

40

-

60

ns

Turn-Off Delay Time

(V

DD = 25V, ID = 2A)

t

d(off)

-

100

-

30

ns

Source Drain Diode Forward On Voltage I

f = 4

V

SD

-

1.6

-

1.6

V

ELECTRICAL CHARACTERISTICS: T = 25° unless otherwise noted.

6423SP6

6424SP6

Characteristic

Symbol

Min.

Max.

Min.

Max.

Units

Drain-Source Breakdown Voltage

V

(BR)DSS

V

dc

(V

GS = 0, ID = 0.25mA)

50

150

100

-

Zero Gate Voltage Drain Current

I

DSS

(V

DS = Rated VDSS, VGS = 0)

-

250

-

250

µA

(V

DS = Rated VDSS, VGS = 0, TJ = 85°C)

-

1000

-

1000

Gate-Body Leakage Current, Forward

I

GSSF

nA

(V

GSF = ±20 Vdc, VDS = 0)

500

Gate Threshold Voltage

V

GS(th)

V

(V

DS = VGS, ID = 250µA)

2.0

4.0

2.0

4.0

Static Drain-Source-On-Resistance

(V

GS = 10Vdc)rDS(on)

.02

.08

-

.16

Drain-Source-On-Voltage

@ I

D =

-

5.0

-

4.0

A

(V

GS = 10V, TJ = 85°C)

V

DS(on)

-

.4

-

.64

V

Forward Transconductance (V

DS = 10V, ID = 12A)

g

FS

-

8.0

-

5.0

mhos

Input Capacitance

(V

DS = 25V,

C

iss

-

700

-

850

pF

Output Capacitance

V

GS = 0,

C

oss

-

450

-

260

pF

Reverse Transfer Capacitance

f = 1MHz)

C

rss

-

180

-

50

pF

Turn-On Delay Time

(V

DD = 25V, ID = 2A)

t

d(on)

-

20

-

30

ns

Turn-Off Delay Time

(V

DD = 25V, ID = 2A)

t

d(off)

-

110

-

40

ns

Source Drain Diode Forward On Voltage I

f = 10

V

SD

-

1.6

-

1.6

V

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