OM6423SP6 - OM6426SP6
2.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
ELECTRICAL CHARACTERISTICS: T = 25° unless otherwise noted.
6425SP6
6426SP6
Characteristic
Symbol
Min.
Max.
Min.
Max.
Units
Drain-Source Breakdown Voltage
V
(BR)DSS
(V
GS = 0, ID = 0.25mA)
200
-
500
-
V
dc
Zero Gate Voltage Drain Current
I
DSS
(V
DS = Rated VDSS, VGS = 0)
-
250
-
250
µA
(V
DS = Rated VDSS, VGS = 0, TJ = 85°C)
-
1000
-
1000
Gate-Body Leakage Current, Forward
I
GSSF
nA
(V
GSF = ±20 Vdc, VDS = 0)
500
500
500
500
Gate Threshold Voltage
V
GS(th)
V
(V
DS = VGS, ID = 250µA)
2.0
4.0
2.0
4.0
Static Drain-Source-On-Resistance
(V
GS = 10Vdc)rDS(on)
-
.8
-
3.0
Drain-Source-On-Voltage
@ I
D =
-
2.0
-
1.0
A
(V
GS = 10V, TJ = 85°C)
V
DS(on)
-
1.6
-
3.0
V
Forward Transconductance (V
DS = 10V, ID = 12A)
g
FS
-
1.3
-
1.0
mhos
Input Capacitance
(V
DS = 25V,
C
iss
-
600
-
400
pF
Output Capacitance
V
GS = 0,
C
oss
-
300
-
150
pF
Reverse Transfer Capacitance
f = 1MHz)
C
rss
-80-40
pF
Turn-On Delay Time
(V
DD = 25V, ID = 2A)
t
d(on)
-
40
-
60
ns
Turn-Off Delay Time
(V
DD = 25V, ID = 2A)
t
d(off)
-
100
-
30
ns
Source Drain Diode Forward On Voltage I
f = 4
V
SD
-
1.6
-
1.6
V
ELECTRICAL CHARACTERISTICS: T = 25° unless otherwise noted.
6423SP6
6424SP6
Characteristic
Symbol
Min.
Max.
Min.
Max.
Units
Drain-Source Breakdown Voltage
V
(BR)DSS
V
dc
(V
GS = 0, ID = 0.25mA)
50
150
100
-
Zero Gate Voltage Drain Current
I
DSS
(V
DS = Rated VDSS, VGS = 0)
-
250
-
250
µA
(V
DS = Rated VDSS, VGS = 0, TJ = 85°C)
-
1000
-
1000
Gate-Body Leakage Current, Forward
I
GSSF
nA
(V
GSF = ±20 Vdc, VDS = 0)
500
500
500
500
Gate Threshold Voltage
V
GS(th)
V
(V
DS = VGS, ID = 250µA)
2.0
4.0
2.0
4.0
Static Drain-Source-On-Resistance
(V
GS = 10Vdc)rDS(on)
.02
.08
-
.16
Drain-Source-On-Voltage
@ I
D =
-
5.0
-
4.0
A
(V
GS = 10V, TJ = 85°C)
V
DS(on)
-
.4
-
.64
V
Forward Transconductance (V
DS = 10V, ID = 12A)
g
FS
-
8.0
-
5.0
mhos
Input Capacitance
(V
DS = 25V,
C
iss
-
700
-
850
pF
Output Capacitance
V
GS = 0,
C
oss
-
450
-
260
pF
Reverse Transfer Capacitance
f = 1MHz)
C
rss
-
180
-
50
pF
Turn-On Delay Time
(V
DD = 25V, ID = 2A)
t
d(on)
-
20
-
30
ns
Turn-Off Delay Time
(V
DD = 25V, ID = 2A)
t
d(off)
-
110
-
40
ns
Source Drain Diode Forward On Voltage I
f = 10
V
SD
-
1.6
-
1.6
V