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BUK754R0-55B Datasheet(PDF) 1 Page - NXP Semiconductors |
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BUK754R0-55B Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 14 page 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 — 4 October 2007 Product data sheet I Very low on-state resistance I Q101 compliant I 175 °C rated I Standard level compatible I Automotive systems I General purpose power switching I Motors, lamps and solenoids I 12 V and 24 V loads I EDS(AL)S ≤ 1.2 J I RDSon = 3.4 mΩ (typ) I ID ≤ 75 A I Ptot ≤ 300 W Table 1. Pinning Pin Description Simplified outline Symbol 1 gate (G) SOT78A (TO-220AB) SOT404 (D2PAK) 2 drain (D) 3 source (S) mb mounting base; connected to drain (D) 12 3 mb 03ab54 mb 13 2 S D G mbb076 |
Similar Part No. - BUK754R0-55B |
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