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BFQ18A Datasheet(PDF) 3 Page - NXP Semiconductors |
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BFQ18A Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 7 page NXP Semiconductors Product specification NPN 4 GHz wideband transistor BFQ18A THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. Note 1. Ic = 80 mA; VCE = 10 V; RL =75 Ω; Vp =Vo = 700 mV; fp =795.25 MHz; Vq =Vo −6 dB; fq = 803.25 MHz; Vr =Vo −6 dB; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz. SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE Rth j-s thermal resistance from junction to soldering point up to Ts = 155 °C (note 1) 20 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT hFE DC current gain IC = 100 mA; VCE = 10 V 25 − Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 2pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 11 pF Cre feedback capacitance IC = 0; VCE = 10 V; f = 10.7 MHz − 1.2 pF fT transition frequency IC = 100 mA; VCE = 10 V; f = 500 MHz − 4 GHz dim intermodulation distortion (see Fig.2) note 1 −−60 dB Rev. 03 - 28 September 2007 3 of 7 |
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Similar Description - BFQ18A |
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