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BFQ18A Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BFQ18A
Description  NPN 4 GHz wideband transistor
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BFQ18A Datasheet(HTML) 3 Page - NXP Semiconductors

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NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1. Ic = 80 mA; VCE = 10 V; RL =75 Ω;
Vp =Vo = 700 mV; fp =795.25 MHz;
Vq =Vo −6 dB; fq = 803.25 MHz;
Vr =Vo −6 dB; fr = 805.25 MHz;
measured at f(p+q-r) = 793.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 155 °C (note 1)
20 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
UNIT
hFE
DC current gain
IC = 100 mA; VCE = 10 V
25
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
2pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
11
pF
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 10.7 MHz
1.2
pF
fT
transition frequency
IC = 100 mA; VCE = 10 V; f = 500 MHz
4
GHz
dim
intermodulation distortion (see Fig.2)
note 1
−−60
dB
Rev. 03 - 28 September 2007
3 of 7


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