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BF992 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BF992 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 9 page NXP Semiconductors Product specification Silicon N-channel dual gate MOS-FET BF992 Fig.3 Output characteristics; typical values. handbook, halfpage 12 MGE797 010 24 0 8 16 4 12 20 2468 VDS (V) ID (mA) 0.1 V 0 V −0.5 V −0.6 V −0.4 V −0.3 V −0.2 V −0.1 V VG1-S = 0.2 V VG2-S = 4 V; Tj =25 °C. Fig.4 Transfer characteristics; typical values. handbook, halfpage −11 30 0 10 20 MGE799 0 4 V 3 V 2 V 1 V 0 V VG2-S = 5 V VG1-S (V) ID (mA) VDS = 10 V; Tj =25 °C. Fig.5 Forward transfer admittance as a function of drain current; typical values. handbook, halfpage 020 30 0 10 20 MGE798 10 ID (mA) 1 V 5 V 2 V 3 V 4 V VG2-S = 0 V |yfs| (mS) VDS = 10 V; Tj =25 °C. Fig.6 Forward transfer admittance as a function of gate 1-source voltage; typical values. handbook, halfpage −11 30 0 10 20 MGE800 0 Yfs (mS) 4 V 5 V 3 V 2 V 1 V 0 V VG2-S = VG1-S (V) VDS = 10 V; Tj =25 °C. Rev. 04 - 21 November 2007 5 of 9 |
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