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HAT2197R Rev.2.00, Apr.02.2004, page 2 of 7 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 16 A Drain peak current ID(pulse) Note1 128 A Body-drain diode reverse drain current IDR 16 A Avalanche current IAP Note 2 16 A Avalanche energy EAR Note 2 25.6 mJ Channel dissipation Pch Note3 2.5 W Channel to ambient thermal impedance θch-a Note3 50 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25 °C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS ——± 0.1 µAVGS = ±20 V, VDS = 0 Zero gate voltage drain current IDSS ——1 µAVDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10 V, I D = 1 mA Static drain to source on state RDS(on) —5.3 6.7 m Ω ID = 8 A, VGS = 10 V Note4 resistance RDS(on) —6.8 9.9 m Ω ID = 8 A, VGS = 4.5 V Note4 Forward transfer admittance |yfs| 2238— S ID = 8 A, VDS = 10 V Note4 Input capacitance Ciss — 2650 — pF VDS = 10 V Output capacitance Coss — 610 — pF VGS = 0 Reverse transfer capacitance Crss — 190 — pF f = 1 MHz Gate Resistance Rg — 1.2 — Ω Total gate charge Qg — 18 — nC VDD = 10 V Gate to source charge Qgs — 7.5 — nC VGS = 4.5 V Gate to drain charge Qgd — 4.2 — nC ID = 16 A Turn-on delay time td(on) —10 — ns VGS = 10 V, ID = 8 A Rise time tr —25 — ns VDD ≅ 10 V Turn-off delay time td(off) —45 — ns RL = 1.25 Ω Fall time tf — 4.2 — ns Rg = 4.7 Ω Body–drain diode forward voltage VDF — 0.80 1.04 V IF = 16 A, VGS = 0 Note4 Body–drain diode reverse recovery time trr — 30 — ns IF = 16 A, VGS = 0 diF/ dt = 100 A/ µs Notes: 4. Pulse test |
