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FDP12N50 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FDP12N50 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 10 page FDP12N50 / FDPF12N50 Rev. A www.fairchildsemi.com 3 Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 0.1 1 10 0.1 1 10 20 0.05 *Notes: 1. 250μs Pulse Test 2. TC = 25 oC VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V VDS,Drain-Source Voltage[V] 30 5678 1 10 -55 oC 150 oC *Notes: 1. VDS = 20V 2. 250μs Pulse Test 25 oC VGS,Gate-Source Voltage[V] 40 0.0 0.5 1.0 1.5 2.0 1 10 100 *Notes: 1. V GS = 0V 2. 250μs Pulse Test 150 oC V SD, Body Diode Forward Voltage [V] 25 oC 0 6 12 18 24 30 0.0 0.5 1.0 1.5 * Note : TJ = 25 oC VGS = 20V VGS = 10V ID, Drain Current [A] 0.1 1 10 0 500 1000 1500 2000 Coss Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note: 1. VGS = 0V 2. f = 1MHz Crss VDS, Drain-Source Voltage [V] 30 0 4 8 12 162024 0 2 4 6 8 10 *Note: ID = 11.5A VDS = 100V VDS = 250V VDS = 400V Qg, Total Gate Charge [nC] |
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