DSILC6-4XX datasheet(2/11 Pages) STMICROELECTRONICS

Part #	DSILC6-4XX

Description	ESD Protection for high speed interface

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Characteristics

DSILC6-4xx

2/11

1

Characteristics

Table 1.

Absolute ratings

Symbol

Parameter

Value

Unit

VPP

Peak pulse voltage

IEC 61000-4-2 contact discharge

IEC 61000-4-2 air discharge

8

15

kV

IPP

Peak pulse current

I/O to GND

Pulse waveform = 8/20 µs

SOT-666

5

A

Flip-Chip

7

PPP

Peak pulse power

SOT-666

90

W

Flip-Chip

120

Tstg

Storage temperature range

-55 to +150

°C

Tj

Maximum junction temperature

125

°C

TL

Lead solder temperature (10 seconds duration)

260

°C

Table 2.

Electrical characteristics (Tamb = 25° C)

Symbol

Parameter

VRM

Reverse stand-off voltage

IRM

Leakage current

VBR

Breakdown voltage

VF

Forward voltage

VCL

Clamping voltage

IPP

Peak pulse current

Symbol

Parameter

Test Conditions

Value

Unit

Min

Typ

Max

IRM

Leakage current

VRM = 5 V

0.5

µA

VBR

Breakdown voltage

between VBUS and GND

IR = 1 mA

6

V

VF

Forward voltage

IF = 10 mA

1

V

Ci/o-GND

Capacitance between

I/O and GND

VI/O = 0 V, F = 1 MHz, VOSC = 30 mV

SOT-666

2

2.5

pF

Flip-Chip

2.5

3

VI/O = 1.65 V, VCC = 4.3 V,

F = 1 MHz, VOSC = 400 mV

SOT-666

1.5

1.8

Flip-Chip

1.8

2.0

Ci/o-i/o

Capacitance

between I/O

VI/O = 0 V, F = 1 MHz, VOSC = 30 mV

SOT-666

1.0

1.25

Flip-Chip

1.25

1.5

VI/O = 1.65 V, VCC = 4.3 V,

F = 1 MHz, VOSC = 400 mV

SOT-666

0.75

0.9

Flip-Chip

0.9

1.20

ΔCi/o-GND

VI/O = 0 V, F = 1 MHz, VOSC = 30 mV

0.06

ΔCi/o-i/o

VI/O = 0 V, F = 1 MHz, VOSC = 30 mV

0.05

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