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2N1711 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. 2N1711
Description  EPITAXIAL PLANAR NPN
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
50
187.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 60 V
VCB = 60 V
TC = 150
oC
10
10
nA
µA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
5
nA
V(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
IC = 100
µA
75
V
V(BR)CER
∗ Collector-Emitter
Breakdown Voltage
(RBE
≤ 10Ω)
IC = 10 mA
50
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 100
µA
7V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 150 mA
IB = 15 mA
0.5
1.5
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 150 mA
IB = 15 mA
0.95
1.3
V
hFE
DC Current Gain
IC = 10
µA
VCE = 10 V
IC = 0.1 mA
VCE = 10 V
IC = 10 mA
VCE = 10 V
IC = 150 mA
VCE = 10 V
IC = 500 mA
VCE = 10 V
IC = 10 mA
VCE = 10 V
TC = -55
oC
20
35
75
100
40
35
60
80
130
130
75
65
300
hfe
Small Signal Current
Gain
IC = 1 mA
VCE = 10 V f = 1 KHz
70
135
300
fT
Transition Frequency
IC = 50 mA VCE = 10 V f = 20 MHz
70
100
MHz
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = 0.5 V f = 1 MHz
50
80
pF
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V
f = 1 MHz
18
25
pF
NF
Noise Figure
IC = 0.3 mA
VCE = 10 V
Rg = 510
f = 1 KHz
3.5
8
dB
hie
Input Impedance
IC = 1 mA
VCE = 5 V
f = 1 KHz
4.4
K
hre
Reverse Voltage Ratio
IC = 1 mA
VCE = 5 V
f = 1 KHz
7.3 x
10
-4
hoe
Output Admittance
IC = 1 mA
VCE = 5 V
f = 1 KHz
23.8
µS
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
2N1711
2/4




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