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SYS88000RKXL-85 Datasheet(PDF) 1 Page - MOSAIC |
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SYS88000RKXL-85 Datasheet(HTML) 1 Page - MOSAIC |
1 / 7 page Address Inputs A0 ~ A22 Data Input/Output D0 ~ D7 Chip Select CS Write Enable WE Output Enable OE No Connect NC Power (+5V) V CC Ground GND Package Details Block Diagram Pin Functions Pin Definition Description Features Issue 1.5: April 2001 SYS88000RKX - 70/85/10/12 8M x 8 SRAM MODULE Plastic 38 pin Single-In-Line (SIP) • Access Times of 85/100/120 ns. • Low Power Disapation: Operating 935 mW (Max.) Standby -L Version 11 mW (Max.) • 5 Volt Supply ± 10%. • Completely Static Operation. • Equal Access and Cycle Times. • Low Voltage VCC Data Retention. • On-board Decoding & Capacitors. • 38 Pin Single-In-Line package. • Upgrade from SYS84000RKX (32Mbit). The SYS88000RKX is a plastic 64Mbit Static RAM Module housed in a standard 38 pin Single In-Line package organised as 8M x 8 with access times of 85,100, or 120 ns. The module is constructed using sixteen 512Kx8 SRAMs in TSOPII packages mounted onto both sides of an FR4 epoxy substrate. This offers an extremely high PCB packing density. The device is offered in standard and low power versions, with the -L module having a low voltage data retention mode for battery backed applications. On board buffering is provided to reduce output capacitance. Note: CS and OE on the module, should be used with care to avoid on and off board bus contention. A22 A20 Vcc WE D2 D3 D0 A1 A2 A3 A4 GND D5 A10 A11 A5 A13 A14 A19 CS A15 A16 A12 A18 A6 D1 GND A0 A7 A8 A9 D7 D4 D6 A17 Vcc OE A21 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 512K X 8 SRAM 512K X 8 SRAM A0 - A18 D0 - D7 WE OE A19 A20 A21 CS 4 TO 16 DECODER A22 D0 - D7 A0~7 B0~7 BI-DIRECTIONAL DRIVERS 74FCT245 OE T/R |
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