Address Inputs

A0 ~ A22

Data Input/Output

D0 ~ D7

Chip Select

CS

Write Enable

WE

Output Enable

OE

No Connect

NC

Power (+5V)

V

CC

Ground

GND

Package Details

Block Diagram

Pin Functions

Pin Definition

Description

Features

Issue 1.5: April 2001

SYS88000RKX - 70/85/10/12

8M x 8 SRAM MODULE

Plastic 38 pin Single-In-Line (SIP)

•

Access Times of 85/100/120 ns.

•

Low Power Disapation:

Operating

935 mW (Max.)

Standby

-L Version

11 mW (Max.)

•

5 Volt Supply ± 10%.

•

Completely Static Operation.

•

Equal Access and Cycle Times.

•

•

On-board Decoding & Capacitors.

•

38 Pin Single-In-Line package.

•

Upgrade from SYS84000RKX (32Mbit).

The SYS88000RKX is a plastic 64Mbit Static RAM

Module housed in a standard 38 pin Single In-Line

package organised as 8M x 8 with access times of

85,100, or 120 ns.

The module is constructed using sixteen 512Kx8 SRAMs

in TSOPII packages mounted onto both sides of an FR4

epoxy substrate. This offers an extremely high PCB

packing density.

The device is offered in standard and low power versions,

with the -L module having a low voltage data retention

mode for battery backed applications. On board buffering

is provided to reduce output capacitance.

Note: CS and OE on the module, should be used

with care to avoid on and off board bus contention.

A22

A20

Vcc

WE

D2

D3

D0

A1

A2

A3

A4

GND

D5

A10

A11

A5

A13

A14

A19

CS

A15

A16

A12

A18

A6

D1

GND

A0

A7

A8

A9

D7

D4

D6

A17

Vcc

OE

A21

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

512K X 8

SRAM

512K X 8

SRAM

A0 - A18

D0 - D7

WE

OE

A19

A20

A21

CS

4 TO 16

DECODER

A22

D0 - D7

A0~7

B0~7

BI-DIRECTIONAL

DRIVERS

74FCT245

OE

T/R