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MSM8521CBI-48D Datasheet(PDF) 6 Page - MOSAIC |
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MSM8521CBI-48D Datasheet(HTML) 6 Page - MOSAIC |
6 / 11 page Issue 5.2 April 2001 PAGE 6 Read Cycle 1 (Address Controlled, /CS=/OE=V IL, /WE=VIH) Read Cycle 2 (/WE = V IH) Previous Data Valid Data Valid Address Data Out tRC tAA tOH Address Data Out Valid Data t RC tAA t CO t OLZ tLZ(4,5) t HZ(3,4,5) t OHZ t OH /CS /OE NOTES(READ CYCLE) 1. /WE is high for read cycle. 2. All read cycle timing is referenced from the last valid address to the first transition address. 3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL levels. 4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device. 5. Transition is measured ±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested. 6. Device is continuously selected with /CS=VIL. 7. Address valid prior to coincident with /CS transition low. 8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle. t OE |
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