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AS1362-BTTT-26 Datasheet(PDF) 10 Page - ams AG |
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AS1362-BTTT-26 Datasheet(HTML) 10 Page - ams AG |
10 / 13 page www.austriamicrosystems.com Revision 1.00 10 - 13 AS1361/AS1362 Data Sheet - A p p l i c a t i o n I n f o r m a t i o n 9 Application Information Capacitor Selection and Regulator Stability For normal operation, use a 1µF capacitor at pin IN and a 1µF capacitor at pin OUT. Larger input capacitor values and lower ESR provide better noise rejection and line-transient response. Reduce output noise and improve load-transient response, stability, and power-supply rejection by using large output capacitors. Note: Some ceramic dielectrics exhibit large capacitance and ESR variation with temperature. With dielectrics such as Z5U and Y5V, it may be necessary to use a 2.2µF or larger output capacitor to ensure stability at tempera- tures below -10°C. With X7R or X5R dielectrics, 1µF is sufficient at all operating temperatures. Bypass Capacitor Use a 0.01µF bypass capacitor at pin BYPASS for low-output voltage noise reduction. The leakage current going into pin BYPASS should be less than 10nA. Increasing the capacitance slightly decreases the output noise. Values above 0.1µF and below 0.001µF are not recommended. Noise, PSRR, and Transient Response The AS1361/AS1362 are designed to deliver ultra-low noise and high PSRR, as well as low dropout and low quiescent currents in battery-powered systems. The power-supply rejection is 92dB at 1kHz and 62dB at 100kHz. (see PSRR vs. Frequency on page 6). When operating from sources other than batteries, improved supply-noise rejection and transient response can be achieved by increasing the values of the input and output capacitors, and through passive filtering techniques. The Figure 16 and Figure 14 on page 7 show the AS1361/AS1362 line- and load-transient responses. Dropout Voltage The AS1361/AS1362 minimum dropout voltage determines the lowest usable supply voltage. In battery-powered sys- tems, this determines the useful end-of-life battery voltage. Since the AS1361/AS1362 use a P-channel MOSFET pass transistor, the dropout voltage is a function of drain-to- source on-resistance (RDS(ON)) multiplied by ILOAD (see Figure 6 on page 5). |
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