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IGBT Module
7MBR75UB120
Characteristics (Representative)
Vcc=600V, Ic=75A, Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25°C
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=25°C / chip
[ Inverter ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
[ Inverter ]
[ Inverter ]
[ Inverter ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
0
20
40
60
80
100
120
012
345
Collector-Emitter voltage : VCE [V]
VGE=20V 15V
12V
10V
8V
0
20
40
60
80
100
120
01234
5
Collector-Emitter voltage : VCE [V]
VGE=20V 15V
12V
10V
8V
0
20
40
60
80
100
120
012
345
Collector-Emitter voltage : VCE [V]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5
101520
25
Gate - Emitter voltage : VGE [ V ]
Ic=100A
Ic=50A
Ic= 25A
0.1
1.0
10.0
0
102030
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
50
100
150
200
250
300
Gate charge : Qg [ nC ]
0
VGE
VCE
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