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NTE308P Datasheet(PDF) 2 Page - NTE Electronics |
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NTE308P Datasheet(HTML) 2 Page - NTE Electronics |
2 / 2 page Electrical Characteristics (Cont’d): (TC = +25°C “Maximum Ratings” unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Rate of Rise of Off–State Voltage dv/dt VD = 700V, VG = –2.5V, TC = +85°C 1000 – – V/ µs Reverse Recovery Time (Rectifier Only) trr IFM = 10A, –diF/dt = –10A/µs, tp = 3µs 0.5 0.7 – µs Circuit Commutated Turn–Off Time tq Minimum Negative Gate Bias = –2.5V, dv/dt = 400V/ µs, TC = +80°C, Note 3 – – 4.2 µs Note 3. Turn–off time increases with temperature; therefore, case temperature must not exceed the level indicated. .250 (6.35) Max .500 (12.7) Max .500 (12.7) Min .110 (2.79) .420 (10.67) Max .070 (1.78) Max Gate .100 (2.54) Anode/Tab Cathode .147 (3.75) Dia Max |
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