 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
MMBD4448ADW Datasheet(PDF) 1 Page - TRANSYS Electronics Limited |
|
||||||||||||||||||||||||||||||
MMBD4448ADW Datasheet(HTML) 1 Page - TRANSYS Electronics Limited |
|
|
1 / 1 page  2. 30¡ À0. 05 1. 25¡ À0. 05 SOT-323 Plastic-Encapsulated Diode MMBD4148W /BAS16W SWITCHING DIODE FEATURES Power dissipation PD: 200 mW (Tamb=25 ℃) Collector current IO: 150 mA Collector-base voltage VR: 75 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR) R IR= 100µA 75 V Reverse voltage leakage current IR VR=75V 1 µA Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA 0.715 0.855 1 1.25 V Diode capacitance CD VR=0V, f=1MHz 2 pF Reveres recovery time trr IF=IR=10mA Irr=0.1×IR 4 nS Unit: mm SOT-323 Marking: A2, KA2, KT1 Transys Electronics LI M ITE D |
Similar Part No. - MMBD4448ADW |
|
Similar Description - MMBD4448ADW |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
