EPITAXIAL SILICON POWER TRANSISTORS

BD433

BD434

BD435

BD436

BD437

BD438

BD439

BD440

BD441

BD442

NPN

PNP

TO126

Plastic Package

Intended for use in Medium Power Linear and Switching Applications

ABSOLUTE MAXIMUM RATINGS

BD433

BD435

BD437

BD439

BD441

BD434

BD436

BD438

BD440

BD442

Collector Base Voltage

22

32

80

Collector Emitter Voltage

22

32

80

Collector Emitter Voltage

22

32

80

Emitter Base Voltage

5.0

Collector Current

4.0

7.0

Base Current

1.0

36.0

1.25

Derate above 25ºC

10

THERMAL RESISTANCE

Junction to Case

3.5

Junction to Ambient in free air

100

DESCRIPTION

SYMBOL

BD433 BD435 BD437 BD439 BD441

BD434 BD436 BD438 BD440 BD442

Collector Cut off Current

<100

<100

<100

<100

<100

µA

Collector Cut off Current

<100

<100

<100

<100

<100

µA

Emitter Cut off Current

<1.0

<1.0

<1.0

<1.0

<1.0

mA

>22

>32

>45

>60

>80

V

<0.5

<0.5

<0.6

<0.8

<0.8

V

Base Emitter On Voltage

typ 0.58

V

<1.1

<1.1

<1.2

<1.5

<1.5

V

Collector Emitter Sustaining

Voltage

Collector Emitter Saturation

Voltage

DESCRIPTION

SYMBOL

- 65 to 150

45

60

45

60

45

60

Operating and Storage

Junction Temperature Range

A

V

UNIT

TEST CONDITION

A

A

W

ºC/W

ºC/W

UNIT

V

V

V

W

mW/ ºC

ºC

B

C

E

Transys

Electronics

LI M ITE D