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BAW56LT1 Datasheet(PDF) 1 Page - TRANSYS Electronics Limited

Part # BAW56LT1
Description  Plastic-Encapsulate Diodes
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Manufacturer  TEL [TRANSYS Electronics Limited]
Direct Link  http://www.transyselectronics.com
Logo TEL - TRANSYS Electronics Limited

BAW56LT1 Datasheet(HTML) 1 Page - TRANSYS Electronics Limited

  BAW56LT1 Datasheet HTML 1Page - TRANSYS Electronics Limited  
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1. 3
SOT-23 Plastic-Encapsulate Diodes
BAW56LT1
SWITCHING DIODE
FEATURES
Power dissipation
PD:
225
mW (Tamb=25
℃)
Forward Current
IF:
200
m A
Reverse Voltage
VR:
70
V
Operating and storage junction temperature range
TJ, Tstg: -55
℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
MAX
UNIT
Reverse breakdown voltage
V(BR)
IR= 100µA
70
V
Reverse voltage
leakage current
IR
VR=70V
2.5
µA
Forward
voltage
VF
IF=1mA
IF=10mA
IF=50mA
IF=150mA
715
855
1000
1250
mV
Diode
capacitance
CD
VR=0V, f=1MHz
2
pF
Reverse recovery time
t r r
6
nS
Unit: mm
SOT-23
Mar ki ng
A1
Transys
Electronics
LI M ITE D


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