QS5U34 datasheet(3/5 Pages) ROHM

Part #	QS5U34

Description	1.8V Drive NchSBD MOSFET

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Manufacturer	ROHM [Rohm]

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3 / 5 page

QS5U34

Transistors

3/4

Electrical characteristic curves

DRAIN-SOURCE VOLTAGE : VDS (V)

0.01

10

100

1000

0.1

1

10

100

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

Ta=25

°C

f=1MHz

VGS=0V

Ciss

Coss

Crss

DRAIN CURRENT : ID (A)

0.01

1

10

100

1000

0.1

1

10

Fig.2 Switching Characteristics

Ta=25

°C

VDD=10V

VGS=4.5V

RG=10

Ω

Pulsed

tf

td(on)

tr

td(off)

TOTAL GATE CHARGE : Qg (nC)

0.0

0

1

2

3

4

5

0.2

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Fig.3 Dynamic Input Characteristics

Ta=25

°C

VDD=10V

ID=1.5A

RG=10

Ω

Pulsed

GATE-SOURCE VOLTAGE : VGS (V)

0.001

0.0001

0.01

0.1

1

10

0.5

0.0

1.0

1.5

2.0

Fig.4 Typical Transfer Characteristics

VDS=10V

Pulsed

Ta=125

°C

75

°C

25

°C

−25°C

GATE-SOURCE VOLTAGE : VGS (V)

01

0

300

250

200

150

100

50

350

400

450

500

23

10

45

67

89

Fig.5 Static Drain-Source

On-State Resistance vs.

Gate-source Voltage

Ta=25

°C

Pulsed

ID=1.5A

ID=0.8A

SOURCE-DRAIN VOLTAGE : VSD (V)

0.0

0.01

0.1

1

10

0.5

1.0

1.5

Fig.6 Source Current vs.

Source-Drain Voltage

VGS=0V

Pulsed

Ta=125

°C

75

°C

25

°C

−25°C

DRAIN CURRENT : ID (A)

0.01

0.1

10

100

1000

110

Fig.7 Static Drain-Source

On-State Resistance

vs. Drain Current (

Ι )

VGS=1.8V

Pulsed

Ta=125

°C

−25°C

75

°C

25

°C

DRAIN CURRENT : ID (A)

Fig.8 Static Drain-Source

On-State Resistance

vs. Drain Current (

ΙΙ )

0.01

0.1

10

100

1000

110

VGS=2.5V

Pulsed

Ta=125

°C

75

°C

25

°C

−25°C

DRAIN CURRENT : ID (A)

Fig.9 Static Drain-Source

On-State Resistance

vs. Drain Current (

ΙΙΙ )

0.01

0.1

10

100

1000

110

VGS=4.5V

Pulsed

Ta=125

°C

75

°C

25

°C

−25°C

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