T68S1MTI-7 datasheet(8/14 Pages) ETC2

Part #	T68S1MTI-7

Description	Low Power 1M (128Kx8)-Bits Static RAM

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Manufacturer	ETC2 [List of Unclassifed Manufacturers]

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8 / 14 page

2003-REV 090

TIWIN Semiconductor

• www.tiwin.com.tw • Tel :(886)-3 -5636031 • Fax:(886)-3-5644823

22

T68 K/S/R 1M

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

ILI

Input Leakage Current

VIN = VSS to VCC

-1

-

1

µA

ILO

Output Leakage Current

/CE1=VIH CE2=VIL or /OE=VIH

or /WE=VIL, VIO=VSS to VCC

-1

-

1

µA

T68K1M

-

3

(1)

6

T68S1M

-

3

(1)

6

ICC1

T68R1M

/CE1

≤0.2V, CE2≥VCC-0.2V,

VIN

≤0.2V or VIN≥VCC-0.2V

Cycle time = 1

µs, 100%duty,

IIO=0mA

-

2

(1)

4

mA

T68K1M

-

15

(1)

20

T68S1M

-

15

(1)

20

ICC2

Average Operating Current

T68R1M

/CE1=VIL, CE2=VIH, VIN=VIH or

VIN=VIL,

Cycle time = min, 100% duty,

IIO=0mA

-

10

(1)

15

mA

T68K1M

IOL = 2.0mA

-

0.4

T68S1M

IOL = 0.5mA

-

0.4

VOL

Output Low Voltage

T68R1M IOL = 0.2mA

-

0.4

V

T68K1M

IOH = -1.0mA

2.2

-

T68S1M

IOH = -0.5mA

2.0

-

VOH

Output High Voltage

T68R1M IOH = -0.1mA

1.4

-

V

T68K1M

-

0.2

T68S1M

-

0.2

ISB

TTL Standby Current

T68R1M

/CE1=VIH or CE2= VIL,

other inputs = VIH or VIL

-

0.2

mA

T68K1M

-

1.0

(1)

3

T68S1M

-

1.0

(1)

3

ISB1

CMOS Standby Current

T68R1M

/CE1

≥VCC-0.2V or

CE2

≤VSS+0.2V ,

other inputs = 0 to VCC

-

0.8

(1)

2

µA

Note: 1. Ta=25

o

C, VCC=3.0V (K), VCC=2.5V (S), and VCC=1.8V (R), not 100% tested.

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