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2003-REV 090
TIWIN Semiconductor
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T68 K/S/R 1M
Symbol
Parameter
Min.
Max.
Condition
CIN
Input Capacitance
-
8pF
CIO
Input/Output Capacit ance
-
10pF
Unmeasured pins set
to 0V
1. The Capacitances listed in the above table are sampled, not 100% tested.
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
T68K1M
2.0
-
3.6
T68S1M
1.5
-
2.7
VDR
VCC for Data
Retention
T68R1M
Standby Mode
1.0
-
2.2
V
C-Grade
-
-
2
E-Grade
-
-
3
T68K1M
VCC=2.0V and
CMOS Standby mode
(1)
I-Grade
-
-
3
C-Grade
-
-
1
E-Grade
-
-
2
T68S1M
VCC=1.5V and
CMOS Standby mode
(1)
I-Grade
-
-
2
C-Grade
-
-
1
E-Grade
-
-
2
IDR
Data Retention
Current
T68R1M
VCC=1.0V and
CMOS Standby mode
(1)
I-Grade
-
-
2
uA
TSDR
Data Retention Setup Time
0
-
-
ns
TRDR
Data Retention Recovery Time
See data retention waveform
TRC
-
-
ns
Note: 1. Standby mode: /CE1
≥Vcc-0.2V or CE2≤ Vss+0.2V
Symbol
Parameter
Rating
Unit
T68K1M
2.7 ~ 3.6
V
T68S1M
2.2 ~ 2.7
V
VCC
T68R1M
Supply Voltage
1.65 ~ 2.2
V
VSS
Ground
0
V
T68K1M
2.2 ~ VCC+0.5
V
T68S1M
2.0 ~ VCC+0.5
V
VIH
T68R1M
Input High Voltage
1.4 ~ VCC+0.5
V
T68K1M
-0.5 ~ 0.6
V
T68S1M
-0.5 ~ 0.6
V
VIL
T68R1M
Input Low Voltage
-0.5 ~ 0.4
V
¢
RECOMMENDED DC OPERATING RANGE
¢
CAPACITANCES (1)
¢ DATA RENTATION CHARACTERISTICS