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CT25ASJ-8 Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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CT25ASJ-8 Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
2 / 2 page Feb.1999 IXe Vtrig 20µH VCE RG VG IGBT CM + VCM Vtrig VG Ixe RECOMMEND CONDITION VCM = 330V ICP = 130A CM = 330 µF VGE = 5V MAXIMUM CONDITION 350V 150A 400 µF – 0 40 80 120 160 02468 CM = 400 µF TC ≤ 70°C MAXIMUM PULSE COLLECTOR CURRENT GATE-EMITTER VOLTAGE VGE (V) TRIGGER SIGNAL Xe TUBE CURRENT VOLTAGE IGBT GATE MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25ASJ-8 STROBE FLASHER USE PERFORMANCE CURVES APPLICATION EXAMPLE Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse gate current during turn-off must be kept less than 0.1A. (In general, it is satisfied if RG ≥ 30Ω) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe ≤ 150A : full luminescence condition) of main condenser (CM=400µF). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total operation hours must be applied within 5,000 hours. Figure 1 |
Similar Part No. - CT25ASJ-8 |
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Similar Description - CT25ASJ-8 |
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