4-173
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
13
2
4
RF OUT
RF OUT
RF IN
GND
GND
MARKING - C6
RF2046
GENERAL PURPOSE AMPLIFIER
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• High Reliability Applications
• Broadband Test Equipment
The RF2046 is a general purpose, low cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50
Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 3000MHz.
The device is self-contained with 50
Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified. With a goal of
enhanced reliability, the extremely small Micro-X ceramic
package offers significantly lower thermal resistance than
similar size plastic packages.
• DC to 3000MHz Operation
• Internally matched Input and Output
• 22dB Small Signal Gain
• 3.0dB Noise Figure
• 10mW Linear Output Power
• Single Positive Power Supply
RF2046
General Purpose Amplifier
RF2046PCBA-41XFully Assembled Evaluation Board
0
Rev A11 050207
NOTES:
1. Shaded lead is pin 1.
2. Darkened areas are metallization.
3. Dimension applies to ceramic lid minus epoxy coating.
0.070
sq.
45° ± 1°
0.068
± 0.002
0.052
0.041
0.025
± 0.002
3
0.005
± 0.002
0.015
+0.002
-0.001
0.020
± 0.002
0.040
± 0.002
0.200 Sq.
Typ.
Package Style: Micro-X Ceramic
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
