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FDMS8692 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDMS8692 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page www.fairchildsemi.com 2 ©2007 Fairchild Semiconductor Corporation FDMS8692 Rev.C Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 V ∆BV DSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C 20 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1 1.8 3 V ∆V GS(th) ∆T J Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -5.4 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 12A 7.0 9.0 m Ω VGS = 4.5, ID = 10.5A 10.5 14.0 VGS = 10V, ID = 12A, TJ = 125°C 10.0 13.0 gFS Forward Transconductance VDD = 10V, ID = 12A 58 S Dynamic Characteristics Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz 950 1265 pF Coss Output Capacitance 515 685 pF Crss Reverse Transfer Capacitance 85 130 pF Rg Gate Resistance f = 1MHz 1.0 4.0 Ω Switching Characteristics td(on) Turn-On Delay Time VDD = 15V, ID = 12A, VGS = 10V, RGEN = 6Ω 9 18 ns tr Rise Time 3 10 ns td(off) Turn-Off Delay Time 19 34 ns tf Fall Time 2 10 ns Qg Total Gate Charge VGS = 0V to 10V VDD = 15V, ID = 12A 15 21 nC Qg Total Gate Charge VGS = 0V to 5V 8 11 nC Qgs Gate to Source Charge 2.7 nC Qgd Gate to Drain “Miller” Charge 2.1 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 2.1A (Note 2) 0.7 1.2 V VGS = 0V, IS = 12A 0.8 1.2 V trr Reverse Recovery Time IF = 12A, di/dt = 100A/µs 29 47 ns Qrr Reverse Recovery Charge 14 25 nC NOTES: 1. RθJA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. Starting TJ = 25°C, L = 3mH, IAS = 10A, VDD = 30V, VGS = 10V. b. 125°C/W when mounted on a minimum pad of 2 oz copper. a. 50°C/W when mounted on a 1in2 pad of 2 oz copper. |
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