RT9591

Preliminary

6

DS9591-07 August 2007

www.richtek.com

Patent Pending

Note 1.

Stresses listed as the above "Absolute Maximum Ratings" may cause permanent damage to the device. These are for

stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the

operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended

periods may remain possibility to affect device reliability.

Note 2.

Devices are ESD sensitive. Handling precaution recommended.

Note 3.

VDRV is the IGBT gate driving power. Therefore, setting VDRV voltage must consider IGBT gate threshold voltage, and

its driving capability.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Charge Input High Threshold

--

0.7

1.3

V

Charge Input Low Threshold

0.4

0.7

--

V

Minimum Off Time

280

360

430

ns

IGBT Driver

IGBT Driver Supply Voltage

2.0

--

5.5

V

DRVIN Input High Threshold

--

1.0

1.3

V

DRVIN Input Low Threshold

0.4

1

--

V

--

6

8

Ω

DRVOUT On Resistance to GND

--

6

8

Ω

Propagation Delay (Rising)

--

--

20

ns

Propagation Delay (Falling)

--

--

200

ns

Voltage Detector

Voltage Detector Trip (Falling)

FBVD Falling

0.96

0.99

1.02

V

VDOUT On Resistance to GND

--

16

19

Ω