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EM639165 Datasheet(PDF) 1 Page - Etron Technology, Inc. |
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EM639165 Datasheet(HTML) 1 Page - Etron Technology, Inc. |
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1 / 73 page  EtronTech EM639165 Etron Technology, Inc. No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C. TEL: (886)-3-5782345 FAX: (886)-3-5778671 Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice. 8Mega x 16 Synchronous DRAM (SDRAM) (Rev 1.6, 02/2007) Features • Fast access time from clock: 5/5.4 ns • Fast clock rate: 166/143 MHz • Fully synchronous operation • Internal pipelined architecture • 2M word x 16-bit x 4-bank • Programmable Mode registers - CAS# Latency: 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved or linear burst - Burst stop function • Auto Refresh and Self Refresh • 4096 refresh cycles/64ms • CKE power down mode • Single +3.3V power supply • Interface: LVTTL • 54-pin 400 mil plastic TSOP II package • Lead-free package is available Overview The EM639165 SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. The EM639165 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications. Pin Assignment (Top View) VD D DQ 0 VD D Q DQ 1 DQ 2 VS S Q DQ 3 DQ 4 VD D Q DQ 5 DQ 6 VS S Q DQ 7 VD D DQM L /W E /CA S /RA S /C S BA0 BA1 A 10(AP ) A0 A1 A2 A3 VD D 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VS S DQ 1 5 VS S Q DQ 1 4 DQ 1 3 VD D Q DQ 1 2 DQ 1 1 VS S Q DQ 1 0 DQ 9 VD D Q DQ 8 VS S NC DQ M U CL K CK E NC A1 1 A9 A8 A7 A6 A5 A4 VS S Key Specifications EM639165 - 6/7 tCK3 Clock Cycle time(min.) 6/7 ns tAC3 Access time from CLK(max.) 5/5.4 ns tRAS Row Active time(min.) 42/42 ns tRC Row Cycle time(min.) 60/63 ns Ordering Information Part Number Frequency Package EM639165TS-6G 166MHz TSOP II EM639165TS-6LG 166MHz TSOP II EM639165TS-7G 143MHz TSOP II EM639165TS-7LG 143MHz TSOP II “L” indicates Low Power. “G” indicates Lead-free |
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