Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

IS63LV1024-10KI Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc

Part # IS63LV1024-10KI
Description  128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
Download  18 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS63LV1024-10KI Datasheet(HTML) 4 Page - Integrated Silicon Solution, Inc

  IS63LV1024-10KI Datasheet HTML 1Page - Integrated Silicon Solution, Inc IS63LV1024-10KI Datasheet HTML 2Page - Integrated Silicon Solution, Inc IS63LV1024-10KI Datasheet HTML 3Page - Integrated Silicon Solution, Inc IS63LV1024-10KI Datasheet HTML 4Page - Integrated Silicon Solution, Inc IS63LV1024-10KI Datasheet HTML 5Page - Integrated Silicon Solution, Inc IS63LV1024-10KI Datasheet HTML 6Page - Integrated Silicon Solution, Inc IS63LV1024-10KI Datasheet HTML 7Page - Integrated Silicon Solution, Inc IS63LV1024-10KI Datasheet HTML 8Page - Integrated Silicon Solution, Inc IS63LV1024-10KI Datasheet HTML 9Page - Integrated Silicon Solution, Inc Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 18 page
background image
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. I
1/26/07
IS63LV1024
IS63LV1024L
CAPACITANCE(1,2)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
CI/O
Input/Output Capacitance
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
IS63LV1024L POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-8 ns
-10 ns
-12 ns
Symbol Parameter
Test Conditions
Min. Max.
Min. Max.
Min. Max.
Unit
ICC1
VDD Operating
VDD = Max.,
CE = VIL
Com.
100
95
90
mA
Supply Current
IOUT = 0 mA, f = Max.
Ind.
110
105
100
typ.(2)
—75
70
65
ISB
TTL Standby
VDD = Max.,
Com.
35
30
25
mA
Current
VIN = VIH or VIL
Ind.
40
35
30
(TTL Inputs)
CE
≥ VIH, f = Max
ISB1
TTL Standby
VDD = Max.,
Com.
15
15
15
mA
Current
VIN = VIH or VIL
Ind.
20
20
20
(TTL Inputs)
CE
≥ VIH, f = 0
ISB2
CMOS Standby
VDD = Max.,
Com.
1
1
1
mA
Current
CE
≥ VDD – 0.2V,
Ind.
1.5
1.5
1.5
typ.(2)
0.05
0.05
0.05
(CMOS Inputs)
VIN
≥ VDD – 0.2V, or
VIN
≤ 0.2V, f = 0
Notes:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.3V, TA = 25oC. Not 100% tested.
IS63LV1024 POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-8 ns
-10 ns
-12 ns
Symbol Parameter
Test Conditions
Min. Max.
Min. Max.
Min. Max.
Unit
ICC1
VDD Operating
VDD = Max.,
CE = VIL
Com.
160
150
130
mA
Supply Current
IOUT = 0 mA, f = Max.
Ind.
170
160
140
typ.(2)
105
95
75
Ind. (@15 ns)
90
ISB
TTL Standby
VDD = Max.,
Com.
55
45
40
mA
Current
VIN = VIH or VIL
Ind.
55
45
40
(TTL Inputs)
CE
≥ VIH, f = Max
ISB1
TTL Standby
VDD = Max.,
Com.
25
25
25
mA
Current
VIN = VIH or VIL
Ind.
30
30
30
(TTL Inputs)
CE
≥ VIH, f = 0
ISB2
CMOS Standby
VDD = Max.,
Com.
5
5
5
mA
Current
CE
≥ VDD – 0.2V,
Ind.
10
10
10
typ.(2)
0.5
0.5
0.5
(CMOS Inputs)
VIN
≥ VDD – 0.2V, or
VIN
≤ 0.2V, f = 0
Notes:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.3V, TA = 25oC. Not 100% tested.


Similar Part No. - IS63LV1024-10KI

ManufacturerPart #DatasheetDescription
logo
Integrated Silicon Solu...
IS63LV1024-10KI ISSI-IS63LV1024-10KI Datasheet
68Kb / 8P
   128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
More results

Similar Description - IS63LV1024-10KI

ManufacturerPart #DatasheetDescription
logo
Integrated Silicon Solu...
IS63LV1024 ISSI-IS63LV1024 Datasheet
68Kb / 8P
   128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
logo
Integrated Circuit Solu...
IC63LV1024 ICSI-IC63LV1024 Datasheet
133Kb / 10P
   128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
logo
Integrated Silicon Solu...
IS63LV1024L ISSI-IS63LV1024L Datasheet
45Kb / 9P
   128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
logo
Integrated Device Techn...
IDT71V124 IDT-IDT71V124 Datasheet
66Kb / 8P
   3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout
logo
Renesas Technology Corp
71124 RENESAS-71124 Datasheet
188Kb / 9P
   CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout
Feb.27.20
logo
Integrated Device Techn...
IDT71124 IDT-IDT71124 Datasheet
83Kb / 8P
   CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout
logo
List of Unclassifed Man...
P3C1024 ETC1-P3C1024 Datasheet
45Kb / 2P
   HIGH SPEED 128K x 8 3.3V STATIC CMOS RAM
logo
Austin Semiconductor
AS5LC1008 AUSTIN-AS5LC1008_05 Datasheet
527Kb / 10P
   128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
AS5LC1008 AUSTIN-AS5LC1008 Datasheet
121Kb / 10P
   128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
logo
Alliance Semiconductor ...
AS7C1025A ALSC-AS7C1025A Datasheet
116Kb / 8P
   5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com