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IS63LV1024-10KI Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc |
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IS63LV1024-10KI Datasheet(HTML) 4 Page - Integrated Silicon Solution, Inc |
4 / 18 page 4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 1/26/07 IS63LV1024 IS63LV1024L CAPACITANCE(1,2) Symbol Parameter Conditions Max. Unit CIN Input Capacitance VIN = 0V 6 pF CI/O Input/Output Capacitance VOUT = 0V 8 pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V. IS63LV1024L POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) -8 ns -10 ns -12 ns Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Unit ICC1 VDD Operating VDD = Max., CE = VIL Com. — 100 — 95 — 90 mA Supply Current IOUT = 0 mA, f = Max. Ind. — 110 — 105 — 100 typ.(2) —75 — 70 — 65 ISB TTL Standby VDD = Max., Com. — 35 — 30 — 25 mA Current VIN = VIH or VIL Ind. — 40 — 35 — 30 (TTL Inputs) CE ≥ VIH, f = Max ISB1 TTL Standby VDD = Max., Com. — 15 — 15 — 15 mA Current VIN = VIH or VIL Ind. — 20 — 20 — 20 (TTL Inputs) CE ≥ VIH, f = 0 ISB2 CMOS Standby VDD = Max., Com. — 1 — 1 — 1 mA Current CE ≥ VDD – 0.2V, Ind. — 1.5 — 1.5 — 1.5 typ.(2) — 0.05 — 0.05 — 0.05 (CMOS Inputs) VIN ≥ VDD – 0.2V, or VIN ≤ 0.2V, f = 0 Notes: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at VDD = 3.3V, TA = 25oC. Not 100% tested. IS63LV1024 POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) -8 ns -10 ns -12 ns Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Unit ICC1 VDD Operating VDD = Max., CE = VIL Com. — 160 — 150 — 130 mA Supply Current IOUT = 0 mA, f = Max. Ind. — 170 — 160 — 140 typ.(2) — 105 — 95 — 75 Ind. (@15 ns) — 90 ISB TTL Standby VDD = Max., Com. — 55 — 45 — 40 mA Current VIN = VIH or VIL Ind. — 55 — 45 — 40 (TTL Inputs) CE ≥ VIH, f = Max ISB1 TTL Standby VDD = Max., Com. — 25 — 25 — 25 mA Current VIN = VIH or VIL Ind. — 30 — 30 — 30 (TTL Inputs) CE ≥ VIH, f = 0 ISB2 CMOS Standby VDD = Max., Com. — 5 — 5 — 5 mA Current CE ≥ VDD – 0.2V, Ind. — 10 — 10 — 10 typ.(2) — 0.5 — 0.5 — 0.5 (CMOS Inputs) VIN ≥ VDD – 0.2V, or VIN ≤ 0.2V, f = 0 Notes: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at VDD = 3.3V, TA = 25oC. Not 100% tested. |
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