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CM50TF-28H Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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CM50TF-28H Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 4 page Sep.1998 Dimensions Inches Millimeters A 4.02 ±0.02 102.0 ±0.5 B 3.58 ±0.02 91.0 ±0.5 C 3.150 ±0.01 80.0 ±0.25 D 2.913 ±0.01 74.0 ±0.25 E 1.69 43.0 F 1.18 +0.06/-0.02 30 +1.5/-0.5 G 1.18 30.0 H 1.16 29.5 J 1.06 27.0 K 0.96 24.5 L 0.87 22.0 M 0.79 20.0 N 0.67 17.0 Description: Mitsubishi IGBT Modules are de- signed for use in switching appli- cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected super- fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified sys- tem assembly and thermal man- agement. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM50TF-28H is a 1400V (VCES), 50 Ampere Six-IGBT Module. Type Current Rating VCES Amperes Volts (x 50) CM 50 28 Dimensions Inches Millimeters P 0.65 16.5 Q 0.55 14.0 R 0.47 12.0 S 0.43 11.0 T 0.39 10.0 U 0.33 8.5 V 0.32 8.1 X 0.24 6.0 Y 0.22 Dia. Dia. 5.5 Z M4 Metric M4 AA 0.08 2.0 AB 0.28 7.0 MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE Outline Drawing and Circuit Diagram AB F H V TAB #110, t = 0.5 C L E A G N D U AA L B P G K J T R M M AA S X Q X Q XN Z - M4 THD (7 TYP.) Y DIA. (4 TYP.) GuPE uPGvPE vPGwPE wP GuNE uNGvNE vNGwNE wN P P N N UV W P GuP EuP GuN EuN U GvP EvP V GvN EvN GwP EwP W GwN EwN P N N |
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