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EN29SL400T-70BIP Datasheet(PDF) 1 Page - Eon Silicon Solution Inc. |
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EN29SL400T-70BIP Datasheet(HTML) 1 Page - Eon Silicon Solution Inc. |
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1 / 40 page  This Data Sheet may be revised by subsequent versions ©2004 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications. 1 EN29SL400 Rev. A, Issue Date: 2006/04/14 FEATURES • Single power supply operation - Full voltage range:1.65-2.2 volt for read and write operations. - Ideal for battery-powered applications. • High performance - Access times as fast as 70 ns • Low power consumption (typical values at 5 MHz) - 7 mA typical active read current - 15 mA typical program/erase current - 0.2 µA typical standby current • Flexible Sector Architecture: - One 16 K-byte, two 8 K-byte, one 32 K-byte, and seven 64 K-byte sectors (byte mode) - One 8 K-word, two 4 K-word, one 16 K-word and seven 32 K-word sectors (word mode) • Sector protection: - Hardware locking of sectors to prevent program or erase operations within individual sectors - Additionally, temporary Sector Unprotect allows code changes in previously locked sectors. • High performance program/erase speed - Byte/Word program time: 5µs/7µs typical - Sector erase time: 500ms typical • JEDEC Standard Embedded Erase and Program Algorithms • JEDEC standard DATA# polling and toggle bits feature • Single Sector and Chip Erase • Sector Unprotect Mode • Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode • Triple-metal double-poly triple-well COMS Flash Technology • Low Vcc write inhibit < 1.2V • Minimum 100K endurance cycle • Package Options - 48-pin TSOP (Type 1) - 48-ball 6mm x 8mm FBGA • Commercial and Industrial Temperature Range GENERAL DESCRIPTION The EN29SL400 is an 4-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 524,288 bytes or 262144 words. Any byte can be programmed typically in 5µs. The EN29SL400 features 1.8V voltage read and write operation, with access time as fast as 70ns to eliminate the need for WAIT statements in high-performance microprocessor systems. The EN29SL400 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each sector. EN29SL400 4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 1.8 Volt-only |
Similar Part No. - EN29SL400T-70BIP |
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