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EN25B80T-50HI Datasheet(PDF) 4 Page - Eon Silicon Solution Inc. |
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EN25B80T-50HI Datasheet(HTML) 4 Page - Eon Silicon Solution Inc. |
4 / 33 page This Data Sheet may be revised by subsequent versions ©2004 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications. 4 EN25B80 Rev. C, Issue Date: 2006/12/25 MEMORY ORGANIZATION The memory is organized as: 1,048,576 bytes Flexible Sector Architecture Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,one 32-Kbyte, and fifteen 64-Kbyte sectors Bottom or top boot configurations 4096 pages (256 bytes each) Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector or Bulk Erasable but not Page Erasable. Table 2a. Bottom Boot Block Sector Architecture Sector SECTOR SIZE (KByte) Address range 19 64 F0000h – FFFFFh 18 64 E0000h – EFFFFh 17 64 D0000h – DFFFFh 16 64 C0000h – CFFFFh 15 64 B0000h – BFFFFh 14 64 A0000h – AFFFFh 13 64 90000h – 9FFFFh 12 64 80000h – 8FFFFh 11 64 70000h – 7FFFFh 10 64 60000h – 6FFFFh 9 64 50000h – 5FFFFh 8 64 40000h – 4FFFFh 7 64 30000h – 3FFFFh 6 64 20000h – 2FFFFh 5 64 10000h – 1FFFFh 4 32 08000h – 0FFFFh 3 16 04000h – 07FFFh 2 8 02000h – 03FFFh 1 4 01000h – 01FFFh 0 4 00000h – 00FFFh |
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