8/16

2. Read command (READ)

Product

number

Address

length

BR25H010-W

A6-A0

BR25H020-W

A7-A0

BR25H040-W

A8-A0

Product

number

Address

length

BR25H080-W

A9-A0

BR25H160-W

A10-A0

BR25H320-W

A11-A0

By read command, data of EEPROM can be read. As for this command, set CSB LOW, then input address after read ope code.

EEPROM starts data output of the designated address. Data output is started from SCK fall of 15/23

sequentially. This IC has increment read function. After output of data for 1 byte (8bits), by continuing input of SCK, data of the

next address can be read. Increment read can read all the addresses of EEPROM. After reading data of the most significant

address, by continuing increment read, data of the most insignificant address is read.

BR25H080/160/320-W=23 clocks

3. Write command (WRITE)

Product

number

Address

length

BR25H010-W

A6-A0

BR25H020-W

A7-A0

BR25H040-W

A8-A0

Product

number

Address

length

BR25H080-W

A9-A0

BR25H160-W

A10-A0

BR25H320-W

A11-A0

By write command, data of EEPROM can be written. As for this command, set CSB LOW, then input address and data after

write ope code. Then, by making CSB HIGH, the EEPROM starts writing. The write time of EEPROM requires time of tE/W

(Max 5ms). During tE/W, other than status read command is not accepted. Start CSB after taking the last data (D0), and

before the next SCK clock starts. At other timing, write command is not executed, and this write command is cancelled. This

IC has page write function, and after input of data for 1 byte (8 bits), by continuing data input without starting CSB, data up to

16/32

internally at every time when data of 1 byte is input and data is written to respective addresses. When data of the maximum

bytes or higher is input, address rolls over, and previously input data is overwritten.

BR25H080/160/320-W=32 bytes at maximum

BR25H080/160/320-W=Insignificant 5 bits

High-Z

12

1

1

0

0

3

7

1

2

D6

SO

CSB

SCK

SI

4

5

ж

A11

6

8

ж

ж

A0

A1

D7

23

30

24

D0

0

0

0

0

0

D2

D1

～ ～

～ ～

～ ～

～ ～

～ ～

～ ～

～ ～

～ ～

～ ～

～ ～

～ ～

～ ～

～ ～

～ ～

High-Z

1

1

0

0

3

7

1

2

D6

SO

CSB

SCK

SI

4

5

A4

6

8

A7

A0

A1

D7

15

22

16

D0

0

0

0

0

*1

D2

D1

～ ～

～ ～

～ ～

～ ～

～ ～

～ ～

～ ～

～ ～

～ ～

9

10

11

A6

A5

BR25H040-W=A8

Fig.35 Read command (BR25H010/020/040-W)

Fig.36 Read command (BR25H080/160/320-W)

High-Z

31

D0

0

0

0

0

0

D2

D1

D7

23

30

24

D6

0

A0

A1

ж

1

1

2

4

0

CSB

SCK

SI

SO

0

3

7

8

5

6

A11

～ ～

～ ～

～ ～

～ ～

～ ～

ж

ж

～ ～

～ ～

～ ～

～ ～

～ ～

High-Z

23

D0

0

0

0

0

D2

D1

D7

15

22

16

D6

0

A0

A1

1

1

2

4

0

CSB

SCK

SI

SO

0

3

7

8

5

6

A4

～ ～

～ ～

～ ～

～ ～

～ ～

～ ～

～ ～

～ ～

A5

A6

A7

～ ～

～ ～

BR25H040-W=A8

Fig.37 Write command (BR25H010/020/040-W)

Fig.38 Write command (BR25H080/160/320-W)