2/16

●

Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Impressed voltage

Vcc

-0.3~+6.5

V

450(SOP8)

Permissible

dissipation

Pd

450(SOP-J8)

mW

Storage

temperature range

Tstg

-65~150

°C

Operating

temperature range

Topr

-40~125

°C

Terminal voltage

–

-0.3~Vcc+0.3

V

・

When using at Ta=25℃ or higher, 3.6mW (*1,*2) to be reduced per 1℃

●

Memory cell characteristics (Vcc=2.5V～5.5V)

Limits

Parameter

Min

Typ.

Max

Unit

Condition

1,000,000

-

-

Times

Ta

500,000

-

-

Times

Ta

Number of data

300,000

-

-

Times

Ta

40

-

-

Years

Ta

Data hold years

ж1

20

-

-

Years

Ta

●

Recommended action conditions

Parameter

Symbol

Limits

Unit

Power source voltage

Vcc

Input voltage

Vin

0~Vcc

V

●

Input / output capacity (Ta=25°C, frequency=5MHz)

Parameter

Symbol

Conditions

Min.

Max.

Unit

Input capacity

–

8

Output capacity

–

8

pF

*1: Not 100% TESTED

●

Electrical characteristics (Unless otherwise specified, Ta=-40~+125°C, Vcc=2.5~5.5V)

Limits

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

“H” input voltage

VIH

0.7x

Vcc

–

Vcc

+0.3

V

2.5≤Vcc≤5.5V

“L” output voltage

VIL

-0.3

–

0.3x

Vcc

V

2.5≤Vcc≤5.5V

“L” output voltage

VOL

0

–

0.4

V

IOL=2.1mA

“H” output voltage

VOH

Vcc

-0.5

–

Vcc

V

IOH=-0.4mA

Input leak current

ILI

-10

–

10

Output lead current

ILO

-10

–

10

–

–

2.0

mA

Vcc=2.5V,fSCK=5MHz, tE/W=5ms

VIH/VIL=0.9Vcc/0.1Vcc,

Byte write, Page write

Write status regisuter

Current consumption at write

action

–

–

3.0

mA

Vcc=5.5V,fSCK=5MHz, tE/W=5ms

VIH/VIL=0.9Vcc/0.1Vcc

Byte write, Page write

Write status register

–

–

1.5

mA

Vcc=2.5V,fSCK=5MHz

VIH/VIL=0.9Vcc/0.1Vcc,

Read, Read status register

Current consumption at read

action

–

–

2.0

mA

Vcc=5.5V,fSCK=5MHz

VIH/VIL=0.9Vcc/0.1Vcc

Read, Read status register

Standby current

ISB

–

–

10

μA

Vcc=5.5V

CSB=HOLDB=WPB=Vcc, SCK=SI=Vcc or =GND, SO=OPEN

・

Radiation resistance design is not made

●

Block diagram

*1

SO

INSTRUCTION DECODE

CONTROL CLOCK

GENERATION

VOLTAGE

DETECTION

WRITE

INHIBITION

HIGH VOLTAGE

GENERATOR

INSTRUCTION

REGISTER

1～32K

EEPROM

ADDRESS

REGISTER

DATA

REGISTER

ADDRESS

DECODER

READ/WRITE

AMP

8bit

8bit

STATUS REGISTER

CSB

SCK

HOLDB

7～12bit *1

7～12bit *1

WPB

SI

Fig.1 Block diagram

*1 7bit: BR25H010-W

8bit: BR25H020-W

9bit: BR25H040-W

10bit: BR25H080-W

11bit: BR25H160-W

12bit: BR25H320-W

*2