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CM300E3U-12H Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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CM300E3U-12H Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
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2 / 4 page  124 CM300E3U-12H Chopper IGBTMOD™ U-Series Module 300 Amperes/600 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM300E3U-12H Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current (Tc = 25°C) IC 300 Amperes Peak Collector Current (Tj ≤ 150°C) ICM 600* Amperes Emitter Current** (Tc = 25°C) IE 300 Amperes Peak Emitter Current** IEM 600* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 890 Watts Mounting Torque, M6 Main Terminal – 40 in-lb Mounting Torque, M6 Mounting – 40 in-lb Weight – 400 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts IC = 300A, VGE = 15V, Tj = 125°C – 2.6 – Volts Total Gate Charge QG VCC = 300V, IC = 300A, VGE = 15V – 600 – nC Emitter-Collector Voltage** VEC IE = 300A, VGE = 0V – – 2.6 Volts Emitter-Collector Voltage VFM IF = 300A, Clamp Diode Part – – 2.6 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies – – 26.4 nf Output Capacitance Coes VCE = 10V, VGE = 0V – – 14.4 nf Reverse Transfer Capacitance Cres –– 4 nf Resistive Turn-on Delay Time td(on) VCC = 300V, IC = 300A, – – 250 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 600 ns Switch Turn-off Delay Time td(off) RG = 2.1 , Resistive – – 350 ns Times Fall Time tf Load Switching Operation – – 300 ns Diode Reverse Recovery Time** trr IE = 300A, diE/dt = -600A/µs – – 160 ns Diode Reverse Recovery Charge** Qrr IE = 300A, diE/dt = -600A/µs – 0.72 – µC Diode Reverse Recovery Time trr IF = 300A, Clamp Diode Part – – 160 ns Diode Reverse Recovery Charge Qrr diF/dt = -600A/µs – 0.72 – µC **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 124 |
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