Internet Data Sheet

Rev. 1.02, 2007-07

3

03292006-08VU-L8WK

HYS72T[64/128/256]xx0HP–[3S/3.7]–A

Registered DDR2 SDRAM Modules

1Overview

This chapter gives an overview of the 1.8 V 240-Pin Registered DDR2 SDRAM Modules with parity bit product family and

describes its main characteristics.

1.1

Features

• 240-Pin PC2–5300 and PC2–4200 DDR2 SDRAM

memory modules.

• One rank 64M

×72, 128M ×72, and two ranks 128M ×72,

256M

×72, and four rank 256M ×72 module organization

and 64M

×8, 128M ×4 chip organization

• Registered DIMM Parity bit for address and control bus

• 512 MB, 1 GB, and 2 GB module built with 512 Mbit DDR2

SDRAMs in P-TFBGA-60 chipsize packages.

• Standard Double-Data-Rate-Two Synchronous DRAMs

(DDR2 SDRAM) with a single + 1.8 V (± 0.1 V) power

supply

• All speed grades faster than DDR2–400 comply with

DDR2–400 timing specifications.

• Programmable CAS Latencies (3, 4, 5, 6), Burst Length (4

& 8)

• Auto Refresh (CBR) and Self Refresh

• Programmable self refresh rate via EMRS2 setting

• Programmable partial array refresh via EMRS2 settings

• DCC enabling via EMRS2 setting

• All inputs and outputs SSTL_18 compatible

• Off-Chip Driver Impedance Adjustment (OCD) and On-Die

Termination (ODT)

• RDIMM Dimensions (nominal): 30 mm high, 133.35 mm

wide

• Based on standard reference card layouts Raw Card “G”,

“H“, “J“, ”N” and “F“

TABLE 1

Performance Table

1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined

in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,

lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.

Product Type Speed Code

–3S

–3.7

Unit

DRAM Speed Grade

DDR2–667D

DDR2–533C

Module Speed Grade

PC2–5300

PC2–4200

CAS-RCD-RP latencies

5-5-5

4-4-4

t

CK

Max. Clock Frequency

@CL5

f

CK5

333

266

MHz

@CL4

f

CK4

266

266

MHz

@CL3

f

CK3

200

200

MHz

Min. RAS-CAS-Delay

t

RCD

15

15

ns

Min. Row Precharge Time

t

RP

15

15

ns

Min. Row Active Time

t

RAS

45

45

ns

Min. Row Cycle Time

t

RC

60

60

ns