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HYB18L256169BF Datasheet(PDF) 6 Page - Qimonda AG |
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HYB18L256169BF Datasheet(HTML) 6 Page - Qimonda AG |
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6 / 48 page  Data Sheet 6 Rev. 1.02, 2006-12 02032006-MP0M-7FQG HY[B/E]18L256169BF-7.5 256-Mbit Mobile-RAM Overview 1.4 Pin Definition and Description Table 4 Pin Description Ball Type Detailed Function CLK Input Clock: all inputs are sampled on the positive edge of CLK. CKE Input Clock Enable: CKE HIGH activates and CKE LOW deactivates internal clock signals, device input buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operation (all banks idle), ACTIVE POWER- DOWN (row active in any bank) or SUSPEND (access in progress). Input buffers, excluding CLK and CKE are disabled during power-down. Input buffers, excluding CKE are disabled during SELF REFRESH. CS Input Chip Select: All commands are masked when CS is registered HIGH. CS provides for external bank selection on systems with multiple memory banks. CS is considered part of the command code. RAS, CAS, WE Input Command Inputs: RAS, CAS and WE (along with CS) define the command being entered. DQ0 - DQ15 I/O Data Inputs/Output: Bi-directional data bus (16 bit) LDQM, UDQM Input Input/Output Mask: input mask signal for WRITE cycles and output enable for READ cycles. For WRITEs, DQM acts as a data mask when HIGH. For READs, DQM acts as an output enable and places the output buffers in High-Z state when HIGH (two clocks latency). LDQM corresponds to the data on DQ0 - DQ7; UDQM to the data on DQ8 - DQ15. BA0, BA1 Input Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVATE, READ, WRITE or PRECHARGE command is being applied. BA0, BA1 also determine which mode register is to be loaded during a MODE REGISTER SET command (MRS or EMRS). A0 - A12 Input Address Inputs: A0 - A12 define the row address during an ACTIVE command cycle. A0 - A8 define the column address during a READ or WRITE command cycle. In addition, A10 (= AP) controls Auto Precharge operation at the end of the burst read or write cycle. During a PRECHARGE command, A10 (= AP) in conjunction with BA0, BA1 controls which bank(s) are to be precharged: if A10 is HIGH, all four banks will be precharged regardless of the state of BA0 and BA1; if A10 is LOW, BA0, BA1 define the bank to be precharged. During MODE REGISTER SET commands, the address inputs hold the op- code to be loaded. V DDQ Supply I/O Power Supply: Isolated power for DQ output buffers for improved noise immunity: V DDQ = 1.70V to 1.95V V SSQ Supply I/O Ground V DD Supply Power Supply: Power for the core logic and input buffers, V DD = 1.70V to 1.95V V SS Supply Ground N.C. – No Connect |
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