Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

HYB18L256160BC-7.5 Datasheet(PDF) 11 Page - Qimonda AG

Part # HYB18L256160BC-7.5
Description  DRAMs for Mobile Applications 256-Mbit Mobile-RAM
Download  58 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  QIMONDA [Qimonda AG]
Direct Link  http://www.qimonda.com
Logo QIMONDA - Qimonda AG

HYB18L256160BC-7.5 Datasheet(HTML) 11 Page - Qimonda AG

Back Button HYB18L256160BC-7.5 Datasheet HTML 7Page - Qimonda AG HYB18L256160BC-7.5 Datasheet HTML 8Page - Qimonda AG HYB18L256160BC-7.5 Datasheet HTML 9Page - Qimonda AG HYB18L256160BC-7.5 Datasheet HTML 10Page - Qimonda AG HYB18L256160BC-7.5 Datasheet HTML 11Page - Qimonda AG HYB18L256160BC-7.5 Datasheet HTML 12Page - Qimonda AG HYB18L256160BC-7.5 Datasheet HTML 13Page - Qimonda AG HYB18L256160BC-7.5 Datasheet HTML 14Page - Qimonda AG HYB18L256160BC-7.5 Datasheet HTML 15Page - Qimonda AG Next Button
Zoom Inzoom in Zoom Outzoom out
 11 / 58 page
background image
Data Sheet
Rev. 1.73, 2006-09
11
01302004-CZ2R-J9SE
HY[B/E]18L256160B[C/F]L-7.5
256-Mbit Mobile-RAM
2.2.1.2
Burst Type
Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the burst type
and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the burst type and the
starting column address, as shown in Table 6.
2.2.1.3
Read Latency
The Read latency, or CAS latency, is the delay, in clock cycles, between the registration of a READ command and the
availability of the first piece of output data. The latency can be programmed to 2 or 3 clocks.
If a READ command is registered at clock edge n, and the latency is m clocks, the data will be available with clock edge n + m
(for details please refer to the READ command description).
2.2.1.4
Write Burst Mode
When A9 = 0, the burst length programmed via A0-A2 applies to both read and write bursts; when A9 = 1, write accesses
consist of single data elements only.
2.2.1.5
Extended Mode Register
The Extended Mode Register controls additional low power features of the device. These include the Partial Array Self Refresh
(PASR, bits A0-A2)), the Temperature Compensated Self Refresh (TCSR, bits A3-A4)) and the drive strength selection for the
DQs (bits A5-A6). The Extended Mode Register is programmed via the MODE REGISTER SET command (with BA0 = 0 and
BA1 = 1) and will retain the stored information until it is programmed again or the device loses power.
The Extended Mode Register must be loaded when all banks are idle, and the controller must wait the specified time before
initiating any subsequent operation. Violating either of these requirements result in unspecified operation.
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
TABLE 7
Extended Mode Register Definition (BA[1:0] = 10B)
Field
Bits
Type
Description
DS
[6:5]
w
Selectable Drive Strength
00B
Full Drive Strength
01B
Half Drive Strength (default)
Note: All other bit combinations are RESERVED.


Similar Part No. - HYB18L256160BC-7.5

ManufacturerPart #DatasheetDescription
logo
Infineon Technologies A...
HYB18L256160BC-7.5 INFINEON-HYB18L256160BC-7.5 Datasheet
569Kb / 6P
   BJAWBMSpecialty DRAMs Mobile-RAM
More results

Similar Description - HYB18L256160BC-7.5

ManufacturerPart #DatasheetDescription
logo
Qimonda AG
HYB18L256160BCX-7.5 QIMONDA-HYB18L256160BCX-7.5 Datasheet
1Mb / 48P
   DRAMs for Mobile Applications 256-Mbit Mobile-RAM
HYB18L256169BFX QIMONDA-HYB18L256169BFX Datasheet
1Mb / 47P
   DRAMs for Mobile Applications 256-Mbit Mobile-RAM
HYB18L128160BF QIMONDA-HYB18L128160BF Datasheet
1Mb / 55P
   DRAMs for Mobile Applications 128-Mbit Mobile-RAM
HYB18L512160BF-7.5 QIMONDA-HYB18L512160BF-7.5 Datasheet
1Mb / 57P
   DRAMs for Mobile Applications 512-Mbit Mobile-RAM
HYB18L512320BF-7.5 QIMONDA-HYB18L512320BF-7.5 Datasheet
991Kb / 23P
   DRAMs for Mobile Applications 512-Mbit SDR Mobile-RAM
HYB18M512160BFX QIMONDA-HYB18M512160BFX Datasheet
1Mb / 52P
   DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM
HYB18M512160BF-6 QIMONDA-HYB18M512160BF-6 Datasheet
793Kb / 24P
   DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
logo
Infineon Technologies A...
HYB25L256160AC INFINEON-HYB25L256160AC Datasheet
1Mb / 55P
   256-Mbit Mobile-RAM
V1.1, 2003-04-16
HYE25L256160AC INFINEON-HYE25L256160AC Datasheet
1Mb / 55P
   256-Mbit Mobile-RAM
V1.1, 2003-04-16
logo
Qimonda AG
HYB25L256160AC QIMONDA-HYB25L256160AC Datasheet
716Kb / 18P
   256-MBit Mobile-RAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com