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HYB39S256160FF-6 Datasheet(PDF) 4 Page - Qimonda AG |
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HYB39S256160FF-6 Datasheet(HTML) 4 Page - Qimonda AG |
4 / 27 page Internet Data Sheet Rev. 1.42, 2007-09 4 03292006-TMTK-JFEU HY[B/I]39S256[40/80/16][0/7]F[E/T/F](L) 256-MBit Synchronous DRAM 1.2 Description The HYB39S256[400/800/160]F[E/T/F](L) are four bank Synchronous DRAMs organized as 4 banks x 16 MBit x4, 4 banks x 8 MBit x8 and 4 banks x 4 Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates for CAS latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. The chip is fabricated with Qimonda’s advanced 0.11- μm 256-MBit DRAM process technology. The device is designed to comply with all industry standards set for synchronous DRAM products, both electrically and mechanically. All of the control, address, data input and output circuits are synchronized with the positive edge of an externally supplied clock. Operating the four memory banks in an interleave fashion allows random access operation to occur at a higher rate than is possible with standard DRAMs. A sequential and gapless data rate is possible depending on burst length, CAS latency and speed grade of the device. Auto Refresh (CBR) and Self Refresh operation are supported. These devices operate with a single 3.3 V ± 0.3 V power supply. All 256-Mbit components are available in P(G)–TSOPII–54 and PG–TFBGA–54 packages. TABLE 2 Ordering Information for RoHS Compliant Products Product Type Speed Grade Description Package Note Standard Operating Temperature HYB39S256407FE-7 PC133-222 143MHz 64M x 4 SDRAM PG-TFBGA-54 1) 1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury, lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers. HYB39S256400FF-7 PG-TFBGA-54 HYB39S256400FE-7 PG-TSOPII-54 HYB39S256400FFL-7 PG-TFBGA-54 HYB39S256400FEL-7 PG-TSOPII-54 HYB39S256800FF-7 143MHz 32M x 8 SDRAM PG-TFBGA-54 HYB39S256800FE-7 PG-TSOPII-54 HYB39S256800FFL-7 PG-TFBGA-54 HYB39S256800FEL-7 PG-TSOPII-54 HYB39S256160FF-7 143MHz 16M x 16 SDRAM PG-TFBGA-54 HYB39S256160FE-7 PG-TSOPII-54 HYB39S256160FFL-7 PG-TFBGA-54 HYB39S256160FEL-7 PG-TSOPII-54 HYB39S256160FF-6 166MHz 16M x 16 SDRAM PG-TFBGA-54 HYB39S256160FE-6 PG-TSOPII-54 HYB39S256160FFL-6 PG-TFBGA-54 HYB39S256160FEL-6 PG-TSOPII-54 Industrial Operating Temperature HYI39S256800FE-7 PC166-333 143MHz 32M x 8 SDRAM PG-TSOPII-54 1) HYI39S256160FE-7 143MHz 16M x 16 SDRAM |
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