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HYB39S256160FF-6 Datasheet(PDF) 4 Page - Qimonda AG

Part # HYB39S256160FF-6
Description  256-MBit Synchronous DRAM
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Manufacturer  QIMONDA [Qimonda AG]
Direct Link  http://www.qimonda.com
Logo QIMONDA - Qimonda AG

HYB39S256160FF-6 Datasheet(HTML) 4 Page - Qimonda AG

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Internet Data Sheet
Rev. 1.42, 2007-09
4
03292006-TMTK-JFEU
HY[B/I]39S256[40/80/16][0/7]F[E/T/F](L)
256-MBit Synchronous DRAM
1.2
Description
The HYB39S256[400/800/160]F[E/T/F](L) are four bank Synchronous DRAMs organized as 4 banks x 16 MBit x4,
4 banks x 8 MBit x8 and 4 banks x 4 Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates
for CAS latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a
system clock. The chip is fabricated with Qimonda’s advanced 0.11-
μm 256-MBit DRAM process technology.
The device is designed to comply with all industry standards set for synchronous DRAM products, both electrically and
mechanically. All of the control, address, data input and output circuits are synchronized with the positive edge of an externally
supplied clock.
Operating the four memory banks in an interleave fashion allows random access operation to occur at a higher rate than is
possible with standard DRAMs. A sequential and gapless data rate is possible depending on burst length, CAS latency and
speed grade of the device.
Auto Refresh (CBR) and Self Refresh operation are supported. These devices operate with a single 3.3 V ± 0.3 V power supply.
All 256-Mbit components are available in P(G)–TSOPII–54 and PG–TFBGA–54 packages.
TABLE 2
Ordering Information for RoHS Compliant Products
Product Type
Speed Grade
Description
Package
Note
Standard Operating Temperature
HYB39S256407FE-7
PC133-222
143MHz 64M x 4 SDRAM
PG-TFBGA-54
1)
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
HYB39S256400FF-7
PG-TFBGA-54
HYB39S256400FE-7
PG-TSOPII-54
HYB39S256400FFL-7
PG-TFBGA-54
HYB39S256400FEL-7
PG-TSOPII-54
HYB39S256800FF-7
143MHz 32M x 8 SDRAM
PG-TFBGA-54
HYB39S256800FE-7
PG-TSOPII-54
HYB39S256800FFL-7
PG-TFBGA-54
HYB39S256800FEL-7
PG-TSOPII-54
HYB39S256160FF-7
143MHz 16M x 16 SDRAM
PG-TFBGA-54
HYB39S256160FE-7
PG-TSOPII-54
HYB39S256160FFL-7
PG-TFBGA-54
HYB39S256160FEL-7
PG-TSOPII-54
HYB39S256160FF-6
166MHz 16M x 16 SDRAM
PG-TFBGA-54
HYB39S256160FE-6
PG-TSOPII-54
HYB39S256160FFL-6
PG-TFBGA-54
HYB39S256160FEL-6
PG-TSOPII-54
Industrial Operating Temperature
HYI39S256800FE-7
PC166-333
143MHz 32M x 8 SDRAM
PG-TSOPII-54
1)
HYI39S256160FE-7
143MHz 16M x 16 SDRAM


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