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BQ27000 Datasheet(PDF) 3 Page - Texas Instruments |
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BQ27000 Datasheet(HTML) 3 Page - Texas Instruments |
3 / 33 page www.ti.com RECOMMENDED OPERATING CONDITIONS ELECTRICAL CHARACTERISTICS bq27000, bq27200 SLUS556D – SEPTEMBER 2004 – REVISED MARCH 2006 MIN MAX UNIT VCC Supply voltage 2.6 4.5 V TA Operating free-air temperature –20 70 °C Input voltage, SRP and SRN with respect to VSS –100 100 mV over operating free-air temperature range and supply voltage range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT GENERAL ICC(VCC) Active current 52 90 ICC(SLP) Sleep current 1.0 2.5 µA ICC(SHP) Ship current (bq27000 only) 0.9 2.0 ICC(POR) Hibernate current 0 < VCC < 1.5 V 0.6 1.5 RBI pin only, VCC < RBI current < 1 20 nA VCC(POR) V(POR) POR threshold 2.0 2.6 V Input impedance BAT, SRN, SRP 10 M Ω Pull-down current HDQ, SCL, SDA 2.7 4.5 µA HDQ, SCL, SDA and GPIO VCC < 4.2 V 1.5 VIH High-level input voltage VCC > 4.2 V 1.7 VIL Low-level input voltage 0.7 V Low-level output voltage (GPIO) IOL = 1 mA 0.4 VOL Low-level output voltage (HDQ, SCL, SDA) IOL = 2 mA 0.4 VOLTAGE AND TEMPERATURE MEASUREMENT Measurement range VCC = V(BAT) 2.6 4.5 V Reported voltage resolution 2.7 mV Reported accuacy -25 25 Voltage update time 2.56 s Reported temperature resolution 0.25 °K Reported temperature accuracy -3 3 Temperature update time 2.56 s VSRP-VSRN differential input –100 100 mV TIME, CURRENT AND CAPACITY (3.0 V ≤ V CC≤ 4.2 V, 0°C ≤ TA≤ 50°C) fOSC Internal oscillator frequency -2.2% 1.5% Current gain variability -0.5% 0.5% Coulometric gain variability -1.7% 0.5% Coulomb counter input offset(1) -15 0 15 µV EEPROM PROGRAMMING ( VCC≥ 3.0 V, -20°C ≤ TA≤ 35°C)(2) Programming voltage rise time 0.5 1.5 ms Programming voltage high time 10 100 ms Programming voltage fall time 0.5 1.5 ms Programming voltage Applied to PGM pin 20 22 V EEPROM programming current VPROGRAM = 21 V 15 mA (1) Excludes contributions to the offset due to PCB layout or other factors external to the bq27000/bq27200. (2) Maximum number of programming cycles on the EEPROM is 10 and data retention time is 10 years at TA = 85°C. 3 Submit Documentation Feedback |
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Similar Description - BQ27000 |
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