HYB18T512160AF-3.7 datasheet(2/58 Pages) QIMONDA

Part #	HYB18T512160AF-3.7

Description	512-Mbit Double-Data-Rate-Two SDRAM

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Manufacturer	QIMONDA [Qimonda AG]

Direct Link	http://www.qimonda.com

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Internet Data Sheet

HYB18T512[40/80/16]0AF(L)–[3/3S/3.7/5]

512-Mbit DDR2 SDRAM

qag_techdoc_rev400 / 3.2 QAG / 2006-08-07

2

03062006-CPCN-4867

HYB18T512400AF(L), HYB18T512800AF(L), HYB18T512160AF(L)

Revision History: 2007-01, Rev. 1.71

Page

Subjects (major changes since last revision)

All

Qimonda update

All

Adapted internet edition

108

Modified AC Timing Parameters

Previous Revision: 2006-05, Rev. 1.7

57

Changed “Read” to “Write” in condition 4.

57

Removed text “Maximum power up interval for

V

DD / VDDQ is specified

As 20.0 ms. The power interval is defined as the amount of time it takes for

V

DD / VDDQ to power-up From 0 V

to 1.8 V ± 100 mV” from condition 1.

Previous Revision: 2005-08, Rev. 1.6

Similar Part No. - HYB18T512160AF-3.7

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	HYB18T512160AF-3.7	2Mb / 117P	512-Mbit DDR2 SDRAM Rev. 1.3, Jan. 2005

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Similar Description - HYB18T512160AF-3.7

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	HYB18T512400AC5	2Mb / 96P	512-Mbit Double-Data-Rate-Two SDRAM Rev. 1.13, Mai 2004
Qimonda AG	HYB18T512400BF	2Mb / 57P	512-Mbit Double-Data-Rate-Two SDRAM
	HYB18TC512160BF	3Mb / 61P	512-Mbit Double-Data-Rate-Two SDRAM
	HYB18T512400B2C	3Mb / 69P	512-Mbit Double-Data-Rate-Two SDRAM
	HYB18T512400B	3Mb / 68P	512-Mbit Double-Data-Rate-Two SDRAM
	HYB25DC512800B	1Mb / 35P	512-Mbit Double-Data-Rate SDRAM
	HYI25DC512160CE	1Mb / 30P	512-Mbit Double-Data-Rate SDRAM
	HYI25D512160C	1Mb / 35P	512-Mbit Double-Data-Rate SDRAM
	HYB25D512800BT	2Mb / 38P	512-Mbit Double-Data-Rate SDRAM
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HYB18T512160AF-3.7 Datasheet(PDF) 2 Page - Qimonda AG

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