Internet Data Sheet

Rev. 1.0, 2006-11

3

11172006-DXYK-2PPW

HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B

Small Outline DDR2 SDRAM Modules

1Overview

This chapter gives an overview of the 200-Pin Dual Die Small-Outline-DDR2-SDRAM Modules product family and describes

its main characteristics.

1.1

Features

• 200-Pin PC2-6400, PC2–5300 and PC2-4200 DDR2

SDRAM memory modules.

• 256M

× 64 module organization, and 2 × 128M × 8 chip

organization

• Standard Double-Data-Rate-Two Synchronous DRAMs

(DDR2 SDRAM) with a single + 1.8 V (± 0.1 V) power

supply

• 2GB Modules built with stacked 1Gb DDR2 SDRAMs in

PG-TFBGA-71 chipsize packages

• All speed grades faster than DDR2-400 comply with

DDR2-400 timing specifications.

• Programmable CAS Latencies (3, 4, 5 and 6), Burst

Length (8 & 4) and Burst Type

•

Burst Refresh, Distributed Refresh and Self Refresh

• Programmable self refresh rate via EMRS2 setting

• Programmable partial array refresh via EMRS2 settings

• Average Refresh Period 7.8

3.9

µs between 85°C and 95°C.

• DCC enabling via EMRS2 setting

• All inputs and outputs SSTL_18 compatible

• Off-Chip Driver Impedance Adjustment (OCD) and On-Die

Termination (ODT)

• SO-DIMM Dimensions (nominal):

30 mm high, 67.6 mm wide

• Based on Standard reference layouts Raw Card “D”

TABLE 1

Performance Table

1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined

in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,

lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.

Product Type Speed Code

–25F

–2.5

–3

–3S

–3.7

Unit

Speed Grade

PC2–6400

5–5–5

PC2–6400

6–6–6

PC2–5300

4–4–4

PC2–5300

5–5–5

PC2–4200

4–4–4

—

Max. Clock Frequency

@CL6

f

CK6

400

400

––

–MHz

@CL5

f

CK5

400

333

333

333

266

MHz

@CL4

f

CK4

266

266

333

266

266

MHz

@CL3

f

CK3

200

200

200

200

200

MHz

Min. RAS-CAS-Delay

t

RCD

12.5

15

12

15

15

ns

Min. Row Precharge Time

t

RP

12.5

15

12

15

15

ns

Min. Row Active Time

t

RAS

45

45

45

45

45

ns

Min. Row Cycle Time

t

RC

57.5

60

57

60

60

ns