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CM150DU-24F Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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CM150DU-24F Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
2 / 4 page 2 CM150DU-24F Trench Gate Design Dual IGBTMOD™ 150 Amperes/1200 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM150DU-24F Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current (Tc = 25°C) IC 150 Amperes Peak Collector Current (Tj ≤ 150°C) ICM 300* Amperes Emitter Current** (Tc = 25°C) IE 150 Amperes Peak Emitter Current** IEM 300* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 600 Watts Mounting Torque, M6 Main Terminal – 40 in-lb Mounting Torque, M6 Mounting – 40 in-lb Weight – 400 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 20 µA Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C– 1.8 2.4 Volts IC = 150A, VGE = 15V, Tj = 125°C– 1.9 – Volts Total Gate Charge QG VCC = 600V, IC = 150A, VGE = 15V – 1650 – nC Emitter-Collector Voltage** VEC IE = 150A, VGE = 0V – – 3.2 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 |
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