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T15M256B-70DG Datasheet(PDF) 6 Page - Taiwan Memory Technology |
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T15M256B-70DG Datasheet(HTML) 6 Page - Taiwan Memory Technology |
6 / 13 page TE CH tm T15M256B TM Technology Inc. reserves the right P. 6 Publication Date: OCT. 2003 to change products or specifications without notice. Revision:C DATA RETENTION CHARACTERISTICS Item Symbol Test Condition Min Typ max unit Vcc for data retention VDR CS ≥≥≥≥ Vcc-0.2V 1.5 - - V Data retention current IDR Vcc=5.0, CS ≥ ≥≥≥ Vcc-0.2V - 10 uA Data retention set-up time tCDR 0 - - Recovery time tR See data retention waveform 5 - - ms DATA RETENTION WAVE FORM D ata Retention M ode V DR > 1.5V V cc_typ t CD R VCC CS V IH CS >V C C-0.2V V IH Vcc_TYP t R |
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