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Jun-09-2006
N-Channel Enhancement Mode Field
Effect Transistor
P1308ATG
TO-220
Lead Free
NIKO-SEM
On-State Drain Current
1
ID(ON)
VDS = 10V, VGS = 10V
60
A
Drain-Source On-State
Resistance
1
RDS(ON)
VGS = 10V, ID = 40A
10.5
13
mΩ
Forward Transconductance
1
gfs
VDS = 50V, ID = 40A
38
S
DYNAMIC
Input Capacitance
Ciss
3820
Output Capacitance
Coss
610
Reverse Transfer Capacitance
Crss
VGS = 0V, VDS = 25V, f = 1MHz
130
pF
Total Gate Charge
2
Qg
160
Gate-Source Charge
2
Qgs
30
Gate-Drain Charge
2
Qgd
VDS =60V, VGS = 10V,
ID = 40A
55
nC
Turn-On Delay Time
2
td(on)
15
Rise Time
2
tr
VDD = 40V,
65
Turn-Off Delay Time
2
td(off)
ID ≅ 40A, VGS = 10V, RGS = 2.5Ω
50
Fall Time
2
tf
50
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
80
Pulsed Current
3
ISM
250
A
Forward Voltage
1
VSD
IF = 40A, VGS = 0V
1.3
V
Reverse Recovery Time
trr
100
nS
Peak Reverse Recovery Current
IRM(REC)
IF = IS, dlF/dt = 100A / µS
200
A
Reverse Recovery Charge
Qrr
410
nC
1Pulse test : Pulse Width
≤ 300 µsec, Duty Cycle ≤ 2％.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P1308ATG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
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