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2 CM100TU-12F Trench Gate Design Six IGBTMOD™ 100 Amperes/600 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM100TU-12F Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current (Tc = 25°C) IC 100 Amperes Peak Collector Current (Tj ≤ 150°C) ICM 200* Amperes Emitter Current** IE 100 Amperes Peak Emitter Current** IEM 200* Amperes Maximum Collector Dissipation (Tj < 150°C) Pc 350 Watts Mounting Torque, M4 Main Terminal – 15 in-lb Mounting Torque, M5 Mounting – 31 in-lb Weight – 570 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V –– 1mA Gate Leakage Current I GES VGE = VGES, VCE = 0V – – 20 µA Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C – 1.6 2.2 Volts IC = 100A, VGE = 15V, Tj = 125°C – 1.6 – Volts Total Gate Charge QG VCC = 300V, IC = 100A, VGE = 15V – 620 – nC Emitter-Collector Voltage** VEC IE = 100A, VGE = 0V –– 2.6 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 |
